Effects of N incorporation on electron traps at SiO 2/SiC interfaces

A. F. Basile, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO 2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages717-720
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

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Keywords

  • C-V
  • DLTS
  • Electron trapping
  • Interface states
  • SiC MOS
  • Sio /SiC
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Basile, A. F., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2012). Effects of N incorporation on electron traps at SiO 2/SiC interfaces. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 717-720). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.717