Effects of N incorporation on electron traps at SiO2/SiC interfaces

A. F. Basile, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO 2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages717-720
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - Jan 1 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Keywords

  • C-V
  • DLTS
  • Electron trapping
  • Interface states
  • SiC MOS
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Basile, A. F., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2012). Effects of N incorporation on electron traps at SiO2/SiC interfaces. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 717-720). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.717