Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Francis K. Chai, R. D. Schrimpf, J. R. Brews, Dunbar P Birnie, K. F. Galloway, R. N. Vogt, M. N. Orr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages123-125
Number of pages3
Publication statusPublished - 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: Dec 10 1995Dec 13 1995

Other

OtherProceedings of the 1995 International Electron Devices Meeting, IEDM'95
CityWashington, DC, USA
Period12/10/9512/13/95

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Chai, F. K., Schrimpf, R. D., Brews, J. R., Birnie, D. P., Galloway, K. F., Vogt, R. N., & Orr, M. N. (1995). Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. In Technical Digest - International Electron Devices Meeting (pp. 123-125). IEEE.