Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Francis K. Chai, R. D. Schrimpf, J. R. Brews, Dunbar P Birnie, K. F. Galloway, R. N. Vogt, M. N. Orr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages123-125
Number of pages3
Publication statusPublished - 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: Dec 10 1995Dec 13 1995

Other

OtherProceedings of the 1995 International Electron Devices Meeting, IEDM'95
CityWashington, DC, USA
Period12/10/9512/13/95

Fingerprint

Ferroelectric thin films
Niobium
Doping (additives)
Data storage equipment
Film thickness
Leakage currents
Ferroelectric materials
Electric properties
Capacitors
Fatigue of materials
Film capacitor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chai, F. K., Schrimpf, R. D., Brews, J. R., Birnie, D. P., Galloway, K. F., Vogt, R. N., & Orr, M. N. (1995). Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. In Technical Digest - International Electron Devices Meeting (pp. 123-125). IEEE.

Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. / Chai, Francis K.; Schrimpf, R. D.; Brews, J. R.; Birnie, Dunbar P; Galloway, K. F.; Vogt, R. N.; Orr, M. N.

Technical Digest - International Electron Devices Meeting. IEEE, 1995. p. 123-125.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chai, FK, Schrimpf, RD, Brews, JR, Birnie, DP, Galloway, KF, Vogt, RN & Orr, MN 1995, Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 123-125, Proceedings of the 1995 International Electron Devices Meeting, IEDM'95, Washington, DC, USA, 12/10/95.
Chai FK, Schrimpf RD, Brews JR, Birnie DP, Galloway KF, Vogt RN et al. Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. In Technical Digest - International Electron Devices Meeting. IEEE. 1995. p. 123-125
Chai, Francis K. ; Schrimpf, R. D. ; Brews, J. R. ; Birnie, Dunbar P ; Galloway, K. F. ; Vogt, R. N. ; Orr, M. N. / Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. Technical Digest - International Electron Devices Meeting. IEEE, 1995. pp. 123-125
@inproceedings{c1c8779b0d7b4182bb79229965ca21e9,
title = "Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation",
abstract = "Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5{\%} in order to maintain reliable capacitor operation.",
author = "Chai, {Francis K.} and Schrimpf, {R. D.} and Brews, {J. R.} and Birnie, {Dunbar P} and Galloway, {K. F.} and Vogt, {R. N.} and Orr, {M. N.}",
year = "1995",
language = "English",
pages = "123--125",
booktitle = "Technical Digest - International Electron Devices Meeting",
publisher = "IEEE",

}

TY - GEN

T1 - Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

AU - Chai, Francis K.

AU - Schrimpf, R. D.

AU - Brews, J. R.

AU - Birnie, Dunbar P

AU - Galloway, K. F.

AU - Vogt, R. N.

AU - Orr, M. N.

PY - 1995

Y1 - 1995

N2 - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

AB - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

UR - http://www.scopus.com/inward/record.url?scp=0029491451&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029491451&partnerID=8YFLogxK

M3 - Conference contribution

SP - 123

EP - 125

BT - Technical Digest - International Electron Devices Meeting

PB - IEEE

ER -