Abstract
Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Publisher | IEEE |
| Pages | 123-125 |
| Number of pages | 3 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995 |
Other
| Other | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 |
|---|---|
| City | Washington, DC, USA |
| Period | 12/10/95 → 12/13/95 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. / Chai, Francis K.; Schrimpf, R. D.; Brews, J. R.; Birnie, Dunbar P; Galloway, K. F.; Vogt, R. N.; Orr, M. N.
Technical Digest - International Electron Devices Meeting. IEEE, 1995. p. 123-125.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation
AU - Chai, Francis K.
AU - Schrimpf, R. D.
AU - Brews, J. R.
AU - Birnie, Dunbar P
AU - Galloway, K. F.
AU - Vogt, R. N.
AU - Orr, M. N.
PY - 1995
Y1 - 1995
N2 - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.
AB - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.
UR - http://www.scopus.com/inward/record.url?scp=0029491451&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029491451&partnerID=8YFLogxK
M3 - Conference contribution
SP - 123
EP - 125
BT - Technical Digest - International Electron Devices Meeting
PB - IEEE
ER -