Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Francis K. Chai; R. D. Schrimpf; J. R. Brews; Dunbar P Birnie; K. F. Galloway; R. N. Vogt; M. N. Orr

Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Francis K. Chai, R. D. Schrimpf, J. R. Brews, Dunbar P Birnie, K. F. Galloway, R. N. Vogt, M. N. Orr

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting
Publisher	IEEE
Pages	123-125
Number of pages	3
Publication status	Published - 1995
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995

Other

Other	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95
City	Washington, DC, USA
Period	12/10/95 → 12/13/95

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. / Chai, Francis K.; Schrimpf, R. D.; Brews, J. R.; Birnie, Dunbar P; Galloway, K. F.; Vogt, R. N.; Orr, M. N.

Technical Digest - International Electron Devices Meeting. IEEE, 1995. p. 123-125.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chai, FK, Schrimpf, RD, Brews, JR, Birnie, DP, Galloway, KF, Vogt, RN & Orr, MN 1995, Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 123-125, Proceedings of the 1995 International Electron Devices Meeting, IEDM'95, Washington, DC, USA, 12/10/95.

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abstract = "Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.",

author = "Chai, {Francis K.} and Schrimpf, {R. D.} and Brews, {J. R.} and Birnie, {Dunbar P} and Galloway, {K. F.} and Vogt, {R. N.} and Orr, {M. N.}",

year = "1995",

language = "English",

pages = "123--125",

booktitle = "Technical Digest - International Electron Devices Meeting",

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note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

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AU - Chai, Francis K.

AU - Schrimpf, R. D.

AU - Brews, J. R.

AU - Birnie, Dunbar P

AU - Galloway, K. F.

AU - Vogt, R. N.

AU - Orr, M. N.

PY - 1995

Y1 - 1995

N2 - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

AB - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

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BT - Technical Digest - International Electron Devices Meeting

PB - IEEE

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

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