Abstract
Capacitance-voltage (C-V) and Deep-Level-Transient Spectroscopy (DLTS) measurements were performed on Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H-SiC with the SiO2 layer grown by Sodium-Enhanced Oxidation. This technique has yielded 4H-SiC MOS transistors with record channel mobility, although with poor bias stability. The effects of the mobile positive charge on the C-V characteristics and DLTS spectra were investigated by applying a sequence of positive and negative bias-temperature stresses, which drifted the sodium ions toward and away from the SiO2/4H-SiC interface, respectively. Analytical modeling of the C-V curves shows that the drift of sodium ions in the SiO2 layer during the voltage sweep can explain the temperature dependence of the C-V curves. The effects of lateral fluctuations of the surface potential (due to a non-uniform charge distribution) on the inversion layer mobility of MOS transistors are discussed within a two-dimensional percolation model.
| Original language | English |
|---|---|
| Article number | 034502 |
| Journal | Journal of Applied Physics |
| Volume | 115 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface. / Basile, A. F.; Ahyi, A. C.; Feldman, Leonard C; Williams, J. R.; Mooney, P. M.
In: Journal of Applied Physics, Vol. 115, No. 3, 034502, 2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface
AU - Basile, A. F.
AU - Ahyi, A. C.
AU - Feldman, Leonard C
AU - Williams, J. R.
AU - Mooney, P. M.
PY - 2014
Y1 - 2014
N2 - Capacitance-voltage (C-V) and Deep-Level-Transient Spectroscopy (DLTS) measurements were performed on Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H-SiC with the SiO2 layer grown by Sodium-Enhanced Oxidation. This technique has yielded 4H-SiC MOS transistors with record channel mobility, although with poor bias stability. The effects of the mobile positive charge on the C-V characteristics and DLTS spectra were investigated by applying a sequence of positive and negative bias-temperature stresses, which drifted the sodium ions toward and away from the SiO2/4H-SiC interface, respectively. Analytical modeling of the C-V curves shows that the drift of sodium ions in the SiO2 layer during the voltage sweep can explain the temperature dependence of the C-V curves. The effects of lateral fluctuations of the surface potential (due to a non-uniform charge distribution) on the inversion layer mobility of MOS transistors are discussed within a two-dimensional percolation model.
AB - Capacitance-voltage (C-V) and Deep-Level-Transient Spectroscopy (DLTS) measurements were performed on Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H-SiC with the SiO2 layer grown by Sodium-Enhanced Oxidation. This technique has yielded 4H-SiC MOS transistors with record channel mobility, although with poor bias stability. The effects of the mobile positive charge on the C-V characteristics and DLTS spectra were investigated by applying a sequence of positive and negative bias-temperature stresses, which drifted the sodium ions toward and away from the SiO2/4H-SiC interface, respectively. Analytical modeling of the C-V curves shows that the drift of sodium ions in the SiO2 layer during the voltage sweep can explain the temperature dependence of the C-V curves. The effects of lateral fluctuations of the surface potential (due to a non-uniform charge distribution) on the inversion layer mobility of MOS transistors are discussed within a two-dimensional percolation model.
UR - http://www.scopus.com/inward/record.url?scp=84893313681&partnerID=8YFLogxK
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U2 - 10.1063/1.4861646
DO - 10.1063/1.4861646
M3 - Article
AN - SCOPUS:84893313681
VL - 115
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
M1 - 034502
ER -