TY - JOUR
T1 - Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition
AU - Bassim, Nabil D.
AU - Schenck, Peter K.
AU - Donev, Eugene U.
AU - Heilweil, Edwin J.
AU - Cockayne, Eric
AU - Green, Martin L.
AU - Feldman, Leonard C.
PY - 2007/11/30
Y1 - 2007/11/30
N2 - In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VO x , using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO 2 films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties.
AB - In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VO x , using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO 2 films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties.
KW - Combinatorial
KW - Thin films
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U2 - 10.1016/j.apsusc.2007.05.089
DO - 10.1016/j.apsusc.2007.05.089
M3 - Article
AN - SCOPUS:36049003051
VL - 254
SP - 785
EP - 788
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3
ER -