Abstract
In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VOx, using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO2 films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties.
| Original language | English |
|---|---|
| Pages (from-to) | 785-788 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 254 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Nov 30 2007 |
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Keywords
- Combinatorial
- Thin films
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
Cite this
Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition. / Bassim, Nabil D.; Schenck, Peter K.; Donev, Eugene U.; Heilweil, Edwin J.; Cockayne, Eric; Green, Martin L.; Feldman, Leonard C.
In: Applied Surface Science, Vol. 254, No. 3, 30.11.2007, p. 785-788.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition
AU - Bassim, Nabil D.
AU - Schenck, Peter K.
AU - Donev, Eugene U.
AU - Heilweil, Edwin J.
AU - Cockayne, Eric
AU - Green, Martin L.
AU - Feldman, Leonard C
PY - 2007/11/30
Y1 - 2007/11/30
N2 - In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VOx, using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO2 films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties.
AB - In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VOx, using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO2 films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties.
KW - Combinatorial
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=36049003051&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36049003051&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2007.05.089
DO - 10.1016/j.apsusc.2007.05.089
M3 - Article
VL - 254
SP - 785
EP - 788
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3
ER -