Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition

Nabil D. Bassim, Peter K. Schenck, Eugene U. Donev, Edwin J. Heilweil, Eric Cockayne, Martin L. Green, Leonard C Feldman

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VOx, using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO2 films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties.

Original languageEnglish
Pages (from-to)785-788
Number of pages4
JournalApplied Surface Science
Volume254
Issue number3
DOIs
Publication statusPublished - Nov 30 2007

Fingerprint

Pulsed laser deposition
Oxides
pulsed laser deposition
apertures
Oxygen
oxides
oxygen
Substrates
Processing
Terahertz spectroscopy
Rutherford backscattering spectroscopy
Growth temperature
Film growth
Chemical analysis
Silicon wafers
Absorption spectroscopy
Stoichiometry
Partial pressure
Temperature
Spectrometry

Keywords

  • Combinatorial
  • Thin films

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition. / Bassim, Nabil D.; Schenck, Peter K.; Donev, Eugene U.; Heilweil, Edwin J.; Cockayne, Eric; Green, Martin L.; Feldman, Leonard C.

In: Applied Surface Science, Vol. 254, No. 3, 30.11.2007, p. 785-788.

Research output: Contribution to journalArticle

Bassim, Nabil D. ; Schenck, Peter K. ; Donev, Eugene U. ; Heilweil, Edwin J. ; Cockayne, Eric ; Green, Martin L. ; Feldman, Leonard C. / Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition. In: Applied Surface Science. 2007 ; Vol. 254, No. 3. pp. 785-788.
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AU - Cockayne, Eric

AU - Green, Martin L.

AU - Feldman, Leonard C

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