Efficient route to TIBa 2Ca 2Cu 3O 9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source

R. J. McNeely, J. A. Belot, B. J. Hinds, Tobin J Marks, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf, X. F. Zhang, D. J. Miller

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Abstract

Thin TlBa 2Ca 2Cu 3O 9+x. films were grown on single crystal (110) LaAlO 3 from metal-organic chemical-vapor deposition-derived Ba-Ca-Cu-O x precursor films employing Ba(hfa)2·mep, Ca(hfa) 2·tet, and Cu(dpm) 2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885°C in flowing O 2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured T c = 103 K and J c = 4.4 × 10 4 A/cm 2 (77 K, 0 T). Magnetic hysteresis measurements yield J c = 1.9 × 10 5 A/cm 2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with J c = 1.4 × 10 5 A/cm 2 (5 K, 4.5 T).

Original languageEnglish
Pages (from-to)1243-1245
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number9
Publication statusPublished - Sep 1 1997

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

McNeely, R. J., Belot, J. A., Hinds, B. J., Marks, T. J., Schindler, J. L., Chudzik, M. P., Kannewurf, C. R., Zhang, X. F., & Miller, D. J. (1997). Efficient route to TIBa 2Ca 2Cu 3O 9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source. Applied Physics Letters, 71(9), 1243-1245.