Abstract
Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | R Wentzcovitch, A Navrotsky, K Poeppelmeier |
| Pages | 245-250 |
| Number of pages | 6 |
| Volume | 718 |
| Publication status | Published - 2002 |
| Event | Perovskite Materials - San Francisco, CA, United States Duration: Apr 1 2002 → Apr 5 2002 |
Other
| Other | Perovskite Materials |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/1/02 → 4/5/02 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Elastic deformations during phase transition in freestanding BaTiO3 thin films. / Nair, Jaya P.; Stavitski, Natalie; Zon, Ilya; Gartsman, Konstantin; Lubomirsky, Igor.
Materials Research Society Symposium - Proceedings. ed. / R Wentzcovitch; A Navrotsky; K Poeppelmeier. Vol. 718 2002. p. 245-250.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Elastic deformations during phase transition in freestanding BaTiO3 thin films
AU - Nair, Jaya P.
AU - Stavitski, Natalie
AU - Zon, Ilya
AU - Gartsman, Konstantin
AU - Lubomirsky, Igor
PY - 2002
Y1 - 2002
N2 - Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.
AB - Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.
UR - http://www.scopus.com/inward/record.url?scp=0036447946&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036447946&partnerID=8YFLogxK
M3 - Conference contribution
VL - 718
SP - 245
EP - 250
BT - Materials Research Society Symposium - Proceedings
A2 - Wentzcovitch, R
A2 - Navrotsky, A
A2 - Poeppelmeier, K
ER -