Elastic deformations during phase transition in freestanding BaTiO3 thin films

Jaya P. Nair; Natalie Stavitski; Ilya Zon; Konstantin Gartsman; Igor Lubomirsky

doi:10.1557/proc-718-d12.5

Elastic deformations during phase transition in freestanding BaTiO₃ thin films

Jaya P. Nair, Natalie Stavitski, Ilya Zon, Konstantin Gartsman, Igor Lubomirsky

Weizmann Institute of Science, Israel

Research output: Contribution to journal › Conference article › peer-review

Abstract

Elastic deformations during phase transition in freestanding BaTiO₃ thin films were investigated. BaTiO₃ films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al₂O₃. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.

Original language	English
Pages (from-to)	245-250
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	718
DOIs	https://doi.org/10.1557/proc-718-d12.5
Publication status	Published - 2002
Event	Perovskite Materials - San Francisco, CA, United States Duration: Apr 1 2002 → Apr 5 2002

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{c2893ac3a8ab4937b2cfa8bbc6a2f1c2,

title = "Elastic deformations during phase transition in freestanding BaTiO3 thin films",

abstract = "Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.",

author = "Nair, {Jaya P.} and Natalie Stavitski and Ilya Zon and Konstantin Gartsman and Igor Lubomirsky",

year = "2002",

doi = "10.1557/proc-718-d12.5",

language = "English",

volume = "718",

pages = "245--250",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Perovskite Materials ; Conference date: 01-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - Elastic deformations during phase transition in freestanding BaTiO3 thin films

AU - Nair, Jaya P.

AU - Stavitski, Natalie

AU - Zon, Ilya

AU - Gartsman, Konstantin

AU - Lubomirsky, Igor

PY - 2002

Y1 - 2002

N2 - Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.

AB - Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.

UR - http://www.scopus.com/inward/record.url?scp=0036447946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036447946&partnerID=8YFLogxK

U2 - 10.1557/proc-718-d12.5

DO - 10.1557/proc-718-d12.5

M3 - Conference article

AN - SCOPUS:0036447946

VL - 718

SP - 245

EP - 250

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Perovskite Materials

Y2 - 1 April 2002 through 5 April 2002