Electric fields and valence-band offsets at strained [111] heterojunctions

S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Ab initio full-potential linearized augmented plane wave (FLAPW) [H. J. F. Jansen and A. J. Freeman, Phys. Rev. B 30, 561 (1984); M. Weinert, H. Krakauer, E. Wimmer, and A. J. Freeman, ibid. 24, 864 (1981)] calculations have been performed for the [111] ordered common atom strained layer superlattices (in particular, the common-anion GaSb/InSb system and the common-cation InAs/InSb system). We have focused our attention on the potential line up at the two sides of the homopolar isovalent heterojunctions considered, and, in particular, on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane, where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line up is highly tunable as a function of the strain conditions. Finally, we compare our results with those obtained for the [001] heterojunctions.

Original languageEnglish
Pages (from-to)13080-13087
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number19
Publication statusPublished - May 15 1997

Fingerprint

Valence bands
Heterojunctions
heterojunctions
Electric fields
valence
electric fields
Piezoelectricity
superlattices
discontinuity
Superlattices
plane waves
alignment
anions
Anions
Cations
cations
Negative ions
Positive ions
polarization
Polarization

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electric fields and valence-band offsets at strained [111] heterojunctions. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 19, 15.05.1997, p. 13080-13087.

Research output: Contribution to journalArticle

@article{12bd538cb001400d8725ba747d30ed91,
title = "Electric fields and valence-band offsets at strained [111] heterojunctions",
abstract = "Ab initio full-potential linearized augmented plane wave (FLAPW) [H. J. F. Jansen and A. J. Freeman, Phys. Rev. B 30, 561 (1984); M. Weinert, H. Krakauer, E. Wimmer, and A. J. Freeman, ibid. 24, 864 (1981)] calculations have been performed for the [111] ordered common atom strained layer superlattices (in particular, the common-anion GaSb/InSb system and the common-cation InAs/InSb system). We have focused our attention on the potential line up at the two sides of the homopolar isovalent heterojunctions considered, and, in particular, on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane, where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line up is highly tunable as a function of the strain conditions. Finally, we compare our results with those obtained for the [001] heterojunctions.",
author = "S. Picozzi and A. Continenza and Freeman, {Arthur J}",
year = "1997",
month = "5",
day = "15",
language = "English",
volume = "55",
pages = "13080--13087",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

TY - JOUR

T1 - Electric fields and valence-band offsets at strained [111] heterojunctions

AU - Picozzi, S.

AU - Continenza, A.

AU - Freeman, Arthur J

PY - 1997/5/15

Y1 - 1997/5/15

N2 - Ab initio full-potential linearized augmented plane wave (FLAPW) [H. J. F. Jansen and A. J. Freeman, Phys. Rev. B 30, 561 (1984); M. Weinert, H. Krakauer, E. Wimmer, and A. J. Freeman, ibid. 24, 864 (1981)] calculations have been performed for the [111] ordered common atom strained layer superlattices (in particular, the common-anion GaSb/InSb system and the common-cation InAs/InSb system). We have focused our attention on the potential line up at the two sides of the homopolar isovalent heterojunctions considered, and, in particular, on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane, where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line up is highly tunable as a function of the strain conditions. Finally, we compare our results with those obtained for the [001] heterojunctions.

AB - Ab initio full-potential linearized augmented plane wave (FLAPW) [H. J. F. Jansen and A. J. Freeman, Phys. Rev. B 30, 561 (1984); M. Weinert, H. Krakauer, E. Wimmer, and A. J. Freeman, ibid. 24, 864 (1981)] calculations have been performed for the [111] ordered common atom strained layer superlattices (in particular, the common-anion GaSb/InSb system and the common-cation InAs/InSb system). We have focused our attention on the potential line up at the two sides of the homopolar isovalent heterojunctions considered, and, in particular, on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane, where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line up is highly tunable as a function of the strain conditions. Finally, we compare our results with those obtained for the [001] heterojunctions.

UR - http://www.scopus.com/inward/record.url?scp=0040554236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040554236&partnerID=8YFLogxK

M3 - Article

VL - 55

SP - 13080

EP - 13087

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

ER -