Abstract
Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In 2O 3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In 2_2xZn xSn xO 3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Progress in Natural Science |
| Volume | 22 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Feb 2012 |
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Keywords
- Amorphous
- Deposition temperature
- Oxide
- Semiconductor
- Transparent conducting oxide
ASJC Scopus subject areas
- General
Cite this
Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films. / Buchholz, D. B.; Proffit, D. E.; Wisser, M. D.; Mason, Thomas O; Chang, Robert P. H.
In: Progress in Natural Science, Vol. 22, No. 1, 02.2012, p. 1-6.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films
AU - Buchholz, D. B.
AU - Proffit, D. E.
AU - Wisser, M. D.
AU - Mason, Thomas O
AU - Chang, Robert P. H.
PY - 2012/2
Y1 - 2012/2
N2 - Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In 2O 3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In 2_2xZn xSn xO 3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.
AB - Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In 2O 3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In 2_2xZn xSn xO 3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.
KW - Amorphous
KW - Deposition temperature
KW - Oxide
KW - Semiconductor
KW - Transparent conducting oxide
UR - http://www.scopus.com/inward/record.url?scp=84861455177&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861455177&partnerID=8YFLogxK
U2 - 10.1016/j.pnsc.2011.12.001
DO - 10.1016/j.pnsc.2011.12.001
M3 - Article
AN - SCOPUS:84861455177
VL - 22
SP - 1
EP - 6
JO - Progress in Natural Science: Materials International
JF - Progress in Natural Science: Materials International
SN - 1002-0071
IS - 1
ER -