Abstract
Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In2_2xZnxSnxO3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.
Original language | English |
---|---|
Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Progress in Natural Science: Materials International |
Volume | 22 |
Issue number | 1 |
DOIs | |
Publication status | Published - Feb 2012 |
Keywords
- Amorphous
- Deposition temperature
- Oxide
- Semiconductor
- Transparent conducting oxide
ASJC Scopus subject areas
- Materials Science(all)