Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

D. B. Buchholz, D. E. Proffit, M. D. Wisser, T. O. Mason, R. P.H. Chang

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In2_2xZnxSnxO3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalProgress in Natural Science: Materials International
Volume22
Issue number1
DOIs
Publication statusPublished - Feb 2012

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Keywords

  • Amorphous
  • Deposition temperature
  • Oxide
  • Semiconductor
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Materials Science(all)

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