Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

D. B. Buchholz; D. E. Proffit; M. D. Wisser; T. O. Mason; R. P.H. Chang

doi:10.1016/j.pnsc.2011.12.001

Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

D. B. Buchholz, D. E. Proffit, M. D. Wisser, T. O. Mason, R. P.H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In₂O₃ structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In_{2_2x}Zn_xSn_xO₃, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Progress in Natural Science: Materials International
Volume	22
Issue number	1
DOIs	https://doi.org/10.1016/j.pnsc.2011.12.001
Publication status	Published - Feb 2012

Keywords

Amorphous
Deposition temperature
Oxide
Semiconductor
Transparent conducting oxide

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.pnsc.2011.12.001

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@article{febf923b570c470d9541757aedadc882,

title = "Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films",

abstract = "Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In2_2xZnxSnxO3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.",

keywords = "Amorphous, Deposition temperature, Oxide, Semiconductor, Transparent conducting oxide",

author = "Buchholz, {D. B.} and Proffit, {D. E.} and Wisser, {M. D.} and Mason, {T. O.} and Chang, {R. P.H.}",

note = "Funding Information: This work was supported by the MRSEC program of the National Science Foundation under Grant no. NSF-DMR-0520513 at the Materials Research Center of Northwestern University and the Department of Energy under Grant no. DE-FG02-08ER46536/A000 . D.E. Proffit acknowledges support of an NSF Graduate Research Fellowship. We would also like to acknowledge the Northwestern University Atomic and Nanoscale Characterization Center (NUANCE) for use of the JEM 2100 TEM and FEI Helios 600, the J.B. Cohen X-Ray Diffraction Facility for use the of Rigaku ATX-G, the Optical Microscopy & Metallography Facility for use of the Ecopia HMS 3000 and the Polymer Characterization Laboratory for use of the Alpha-Step P10.",

year = "2012",

month = feb,

doi = "10.1016/j.pnsc.2011.12.001",

language = "English",

volume = "22",

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journal = "Progress in Natural Science: Materials International",

issn = "1002-0071",

publisher = "Chinese Materials Research Society",

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T1 - Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

AU - Buchholz, D. B.

AU - Proffit, D. E.

AU - Wisser, M. D.

AU - Mason, T. O.

AU - Chang, R. P.H.

N1 - Funding Information: This work was supported by the MRSEC program of the National Science Foundation under Grant no. NSF-DMR-0520513 at the Materials Research Center of Northwestern University and the Department of Energy under Grant no. DE-FG02-08ER46536/A000 . D.E. Proffit acknowledges support of an NSF Graduate Research Fellowship. We would also like to acknowledge the Northwestern University Atomic and Nanoscale Characterization Center (NUANCE) for use of the JEM 2100 TEM and FEI Helios 600, the J.B. Cohen X-Ray Diffraction Facility for use the of Rigaku ATX-G, the Optical Microscopy & Metallography Facility for use of the Ecopia HMS 3000 and the Polymer Characterization Laboratory for use of the Alpha-Step P10.

PY - 2012/2

Y1 - 2012/2

N2 - Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In2_2xZnxSnxO3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.

AB - Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In2_2xZnxSnxO3, where x = 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.

KW - Amorphous

KW - Deposition temperature

KW - Oxide

KW - Semiconductor

KW - Transparent conducting oxide

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