Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C

B)

B. Kleinsorge, A. Ilie, Manish Chhowalla, W. Fukarek, W. I. Milne, J. Robertson

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Tetrahedrally bonded amorphous carbon (ta-C) is a predominately sp3-bonded semiconductor with a band gap of order 2 eV. It can be doped n-type using nitrogen but no successful p-type doping has been reported until now. On the other hand, it has recently been shown that the incorporation of boron reduces the intrinsic compressive stress of ta-C, while still maintaining its high fraction of sp3 sites. This paper reports a detailed study of the electrical properties of boron-doped ta-C (ta-C:B). The ta-C:B films are deposited in a filtered cathodic vacuum arc system using a pressed cathode of graphite and boron powder. The composition and structure of the films are examined by electron energy loss spectroscopy. We find that the room temperature conductivity of the films increases by five orders of magnitude with a boron concentration from 0 to 8%. The conductivity activation energy decreases for the same boron concentration, while the E04 gap remains constant. N-type silicon/ta-C:B heterojunctions show a rectifying behaviour as a function of the boron concentration of the films. The films show photoconductivity. The combined results indicate p-type doping of ta-C.

Original languageEnglish
Pages (from-to)472-476
Number of pages5
JournalDiamond and Related Materials
Volume7
Issue number2-5
Publication statusPublished - Feb 1998

Fingerprint

Boron
Amorphous carbon
boron
Electric properties
Optical properties
electrical properties
optical properties
carbon
Doping (additives)
conductivity
Graphite
Electron energy loss spectroscopy
Photoconductivity
Silicon
Compressive stress
photoconductivity
Powders
Heterojunctions
heterojunctions
Energy gap

Keywords

  • Boronated ta-C
  • Doping
  • Photoconductivity
  • Tetrahedral amorphous carbon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kleinsorge, B., Ilie, A., Chhowalla, M., Fukarek, W., Milne, W. I., & Robertson, J. (1998). Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C: B). Diamond and Related Materials, 7(2-5), 472-476.

Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C : B). / Kleinsorge, B.; Ilie, A.; Chhowalla, Manish; Fukarek, W.; Milne, W. I.; Robertson, J.

In: Diamond and Related Materials, Vol. 7, No. 2-5, 02.1998, p. 472-476.

Research output: Contribution to journalArticle

Kleinsorge, B, Ilie, A, Chhowalla, M, Fukarek, W, Milne, WI & Robertson, J 1998, 'Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C: B)', Diamond and Related Materials, vol. 7, no. 2-5, pp. 472-476.
Kleinsorge, B. ; Ilie, A. ; Chhowalla, Manish ; Fukarek, W. ; Milne, W. I. ; Robertson, J. / Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C : B). In: Diamond and Related Materials. 1998 ; Vol. 7, No. 2-5. pp. 472-476.
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