Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

Toshihiro Moriga, Daniel R. Kammler, Thomas O Mason, George B. Palmer, Kenneth R Poeppelmeier

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

Original languageEnglish
Pages (from-to)2705-2710
Number of pages6
JournalJournal of the American Ceramic Society
Volume82
Issue number10
Publication statusPublished - Oct 1999

Fingerprint

Zinc Oxide
Gallium
Indium
Zinc oxide
Electric properties
Optical properties
Metastable phases
X ray diffraction analysis
Solubility
Temperature

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system. / Moriga, Toshihiro; Kammler, Daniel R.; Mason, Thomas O; Palmer, George B.; Poeppelmeier, Kenneth R.

In: Journal of the American Ceramic Society, Vol. 82, No. 10, 10.1999, p. 2705-2710.

Research output: Contribution to journalArticle

@article{a083a10a32f741c59a8bc74503e323c4,
title = "Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system",
abstract = "The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.",
author = "Toshihiro Moriga and Kammler, {Daniel R.} and Mason, {Thomas O} and Palmer, {George B.} and Poeppelmeier, {Kenneth R}",
year = "1999",
month = "10",
language = "English",
volume = "82",
pages = "2705--2710",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "10",

}

TY - JOUR

T1 - Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

AU - Moriga, Toshihiro

AU - Kammler, Daniel R.

AU - Mason, Thomas O

AU - Palmer, George B.

AU - Poeppelmeier, Kenneth R

PY - 1999/10

Y1 - 1999/10

N2 - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

AB - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033204347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033204347&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033204347

VL - 82

SP - 2705

EP - 2710

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 10

ER -