Abstract
The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 2705-2710 |
| Number of pages | 6 |
| Journal | Journal of the American Ceramic Society |
| Volume | 82 |
| Issue number | 10 |
| Publication status | Published - Oct 1999 |
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ASJC Scopus subject areas
- Ceramics and Composites
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Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system. / Moriga, Toshihiro; Kammler, Daniel R.; Mason, Thomas O; Palmer, George B.; Poeppelmeier, Kenneth R.
In: Journal of the American Ceramic Society, Vol. 82, No. 10, 10.1999, p. 2705-2710.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system
AU - Moriga, Toshihiro
AU - Kammler, Daniel R.
AU - Mason, Thomas O
AU - Palmer, George B.
AU - Poeppelmeier, Kenneth R
PY - 1999/10
Y1 - 1999/10
N2 - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
AB - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033204347&partnerID=8YFLogxK
M3 - Article
VL - 82
SP - 2705
EP - 2710
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 10
ER -