TY - JOUR
T1 - Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system
AU - Moriga, Toshihiro
AU - Kammler, Daniel R.
AU - Mason, Thomas O.
AU - Palmer, George B.
AU - Poeppelmeier, Kenneth R.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1999
Y1 - 1999
N2 - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.47<[In]/([In]+[Ga])<0.67 for the k = 1 member, 0.35<[In]/([In]+[Ga])<0.77 for the k = 2 member, and 0.29<[In]/([In]+[Ga])<1.00 for the k = 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
AB - The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.47<[In]/([In]+[Ga])<0.67 for the k = 1 member, 0.35<[In]/([In]+[Ga])<0.77 for the k = 2 member, and 0.29<[In]/([In]+[Ga])<1.00 for the k = 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
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U2 - 10.1111/j.1151-2916.1999.tb02145.x
DO - 10.1111/j.1151-2916.1999.tb02145.x
M3 - Article
AN - SCOPUS:0033204347
VL - 82
SP - 2705
EP - 2710
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 10
ER -