Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

Toshihiro Moriga, Daniel R. Kammler, Thomas O Mason, George B. Palmer, Kenneth R Poeppelmeier

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The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

Original languageEnglish
Pages (from-to)2705-2710
Number of pages6
JournalJournal of the American Ceramic Society
Issue number10
Publication statusPublished - Oct 1999


ASJC Scopus subject areas

  • Ceramics and Composites

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