Abstract
The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 2705-2710 |
| Number of pages | 6 |
| Journal | Journal of the American Ceramic Society |
| Volume | 82 |
| Issue number | 10 |
| Publication status | Published - Oct 1999 |
ASJC Scopus subject areas
- Ceramics and Composites
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Moriga, T., Kammler, D. R., Mason, T. O., Palmer, G. B., & Poeppelmeier, K. R. (1999). Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system. Journal of the American Ceramic Society, 82(10), 2705-2710.