Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick; Patrick T. Hurley; Allon I. Hochbaum; Peidong Yang; Nathan S. Lewis

doi:10.1021/ja056785w

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article

122 Citations (Scopus)

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 10⁵ over a relatively small gate voltage swing (±2 V).

Original language	English
Pages (from-to)	8990-8991
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	28
DOIs	https://doi.org/10.1021/ja056785w
Publication status	Published - Jul 19 2006

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ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

Cite this

Haick, H., Hurley, P. T., Hochbaum, A. I., Yang, P., & Lewis, N. S. (2006). Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. Journal of the American Chemical Society, 128(28), 8990-8991. https://doi.org/10.1021/ja056785w

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Access to Document

10.1021/ja056785w