Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick; Patrick T. Hurley; Allon I. Hochbaum; Peidong Yang; Nathan S Lewis

doi:10.1021/ja056785w

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S Lewis

California Institute of Technology

Research output: Contribution to journal › Article

118 Citations (Scopus)

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 10⁵ over a relatively small gate voltage swing (±2 V).

Original language	English
Pages (from-to)	8990-8991
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	28
DOIs	https://doi.org/10.1021/ja056785w
Publication status	Published - Jul 19 2006

Fingerprint

Nanowires

Chemical stability

Surface defects

Silicon

Field effect transistors

Oxides

Air

Electric potential

ASJC Scopus subject areas

Chemistry(all)

Cite this

Haick, H., Hurley, P. T., Hochbaum, A. I., Yang, P., & Lewis, N. S. (2006). Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. Journal of the American Chemical Society, 128(28), 8990-8991. https://doi.org/10.1021/ja056785w

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. / Haick, Hossam; Hurley, Patrick T.; Hochbaum, Allon I.; Yang, Peidong; Lewis, Nathan S.

In: Journal of the American Chemical Society, Vol. 128, No. 28, 19.07.2006, p. 8990-8991.

Research output: Contribution to journal › Article

Haick, H, Hurley, PT, Hochbaum, AI, Yang, P & Lewis, NS 2006, 'Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires', Journal of the American Chemical Society, vol. 128, no. 28, pp. 8990-8991. https://doi.org/10.1021/ja056785w

Haick H, Hurley PT, Hochbaum AI, Yang P, Lewis NS. Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. Journal of the American Chemical Society. 2006 Jul 19;128(28):8990-8991. https://doi.org/10.1021/ja056785w

Haick, Hossam ; Hurley, Patrick T. ; Hochbaum, Allon I. ; Yang, Peidong ; Lewis, Nathan S. / Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. In: Journal of the American Chemical Society. 2006 ; Vol. 128, No. 28. pp. 8990-8991.

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Access to Document

10.1021/ja056785w