Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick; Patrick T. Hurley; Allon I. Hochbaum; Peidong Yang; Nathan S. Lewis

doi:10.1021/ja056785w

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 10⁵ over a relatively small gate voltage swing (±2 V).

Original language	English
Pages (from-to)	8990-8991
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	28
DOIs	https://doi.org/10.1021/ja056785w
Publication status	Published - Jul 19 2006

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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abstract = "Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).",

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AU - Yang, Peidong

AU - Lewis, Nathan S.

PY - 2006/7/19

Y1 - 2006/7/19

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Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Abstract

ASJC Scopus subject areas

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