Abstract
Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).
| Original language | English |
|---|---|
| Pages (from-to) | 8990-8991 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 128 |
| Issue number | 28 |
| DOIs | |
| Publication status | Published - Jul 19 2006 |
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ASJC Scopus subject areas
- Chemistry(all)
Cite this
Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. / Haick, Hossam; Hurley, Patrick T.; Hochbaum, Allon I.; Yang, Peidong; Lewis, Nathan S.
In: Journal of the American Chemical Society, Vol. 128, No. 28, 19.07.2006, p. 8990-8991.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires
AU - Haick, Hossam
AU - Hurley, Patrick T.
AU - Hochbaum, Allon I.
AU - Yang, Peidong
AU - Lewis, Nathan S
PY - 2006/7/19
Y1 - 2006/7/19
N2 - Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).
AB - Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).
UR - http://www.scopus.com/inward/record.url?scp=33746050921&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746050921&partnerID=8YFLogxK
U2 - 10.1021/ja056785w
DO - 10.1021/ja056785w
M3 - Article
C2 - 16834345
AN - SCOPUS:33746050921
VL - 128
SP - 8990
EP - 8991
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 28
ER -