Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S. Lewis

Research output: Contribution to journalArticle

124 Citations (Scopus)

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

Original languageEnglish
Pages (from-to)8990-8991
Number of pages2
JournalJournal of the American Chemical Society
Volume128
Issue number28
DOIs
Publication statusPublished - Jul 19 2006

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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