Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick; Patrick T. Hurley; Allon I. Hochbaum; Peidong Yang; Nathan S. Lewis

doi:10.1021/ja056785w

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

124 Citations (Scopus)

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 10⁵ over a relatively small gate voltage swing (±2 V).

Original language	English
Pages (from-to)	8990-8991
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	28
DOIs	https://doi.org/10.1021/ja056785w
Publication status	Published - Jul 19 2006

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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@article{e075b63cc9e74ffc80afab84cc0dfa2b,

title = "Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires",

abstract = "Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).",

author = "Hossam Haick and Hurley, {Patrick T.} and Hochbaum, {Allon I.} and Peidong Yang and Lewis, {Nathan S.}",

year = "2006",

month = jul,

day = "19",

doi = "10.1021/ja056785w",

language = "English",

volume = "128",

pages = "8990--8991",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "28",

}

TY - JOUR

T1 - Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

AU - Haick, Hossam

AU - Hurley, Patrick T.

AU - Hochbaum, Allon I.

AU - Yang, Peidong

AU - Lewis, Nathan S.

PY - 2006/7/19

Y1 - 2006/7/19

N2 - Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

AB - Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

UR - http://www.scopus.com/inward/record.url?scp=33746050921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746050921&partnerID=8YFLogxK

U2 - 10.1021/ja056785w

DO - 10.1021/ja056785w

M3 - Article

C2 - 16834345

AN - SCOPUS:33746050921

VL - 128

SP - 8990

EP - 8991

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 28

ER -