Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S Lewis

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

Original languageEnglish
Pages (from-to)8990-8991
Number of pages2
JournalJournal of the American Chemical Society
Volume128
Issue number28
DOIs
Publication statusPublished - Jul 19 2006

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Nanowires
Chemical stability
Surface defects
Silicon
Field effect transistors
Oxides
Air
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. / Haick, Hossam; Hurley, Patrick T.; Hochbaum, Allon I.; Yang, Peidong; Lewis, Nathan S.

In: Journal of the American Chemical Society, Vol. 128, No. 28, 19.07.2006, p. 8990-8991.

Research output: Contribution to journalArticle

Haick, Hossam ; Hurley, Patrick T. ; Hochbaum, Allon I. ; Yang, Peidong ; Lewis, Nathan S. / Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. In: Journal of the American Chemical Society. 2006 ; Vol. 128, No. 28. pp. 8990-8991.
@article{e075b63cc9e74ffc80afab84cc0dfa2b,
title = "Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires",
abstract = "Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).",
author = "Hossam Haick and Hurley, {Patrick T.} and Hochbaum, {Allon I.} and Peidong Yang and Lewis, {Nathan S}",
year = "2006",
month = "7",
day = "19",
doi = "10.1021/ja056785w",
language = "English",
volume = "128",
pages = "8990--8991",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "28",

}

TY - JOUR

T1 - Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

AU - Haick, Hossam

AU - Hurley, Patrick T.

AU - Hochbaum, Allon I.

AU - Yang, Peidong

AU - Lewis, Nathan S

PY - 2006/7/19

Y1 - 2006/7/19

N2 - Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

AB - Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

UR - http://www.scopus.com/inward/record.url?scp=33746050921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746050921&partnerID=8YFLogxK

U2 - 10.1021/ja056785w

DO - 10.1021/ja056785w

M3 - Article

C2 - 16834345

AN - SCOPUS:33746050921

VL - 128

SP - 8990

EP - 8991

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 28

ER -