Abstract
We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.
| Original language | English |
|---|---|
| Pages (from-to) | 737-739 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 65 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1994 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Electrical characterization of an ultrahigh concentration boron delta-doping layer. / Weir, B. E.; Feldman, L. C.; Monroe, D.; Grossmann, H. J.; Headrick, R. L.; Hart, T. R.
In: Applied Physics Letters, Vol. 65, No. 6, 1994, p. 737-739.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical characterization of an ultrahigh concentration boron delta-doping layer
AU - Weir, B. E.
AU - Feldman, L. C.
AU - Monroe, D.
AU - Grossmann, H. J.
AU - Headrick, R. L.
AU - Hart, T. R.
PY - 1994
Y1 - 1994
N2 - We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.
AB - We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.
UR - http://www.scopus.com/inward/record.url?scp=2842547235&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2842547235&partnerID=8YFLogxK
U2 - 10.1063/1.112215
DO - 10.1063/1.112215
M3 - Article
AN - SCOPUS:2842547235
VL - 65
SP - 737
EP - 739
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -