Electrical characterization of an ultrahigh concentration boron delta-doping layer

B. E. Weir, L. C. Feldman, D. Monroe, H. J. Grossmann, R. L. Headrick, T. R. Hart

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

Original languageEnglish
Pages (from-to)737-739
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number6
DOIs
Publication statusPublished - 1994

Fingerprint

boron
silicon
crystal lattices
molecular beam epitaxy
solubility
activation
conduction
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Weir, B. E., Feldman, L. C., Monroe, D., Grossmann, H. J., Headrick, R. L., & Hart, T. R. (1994). Electrical characterization of an ultrahigh concentration boron delta-doping layer. Applied Physics Letters, 65(6), 737-739. https://doi.org/10.1063/1.112215

Electrical characterization of an ultrahigh concentration boron delta-doping layer. / Weir, B. E.; Feldman, L. C.; Monroe, D.; Grossmann, H. J.; Headrick, R. L.; Hart, T. R.

In: Applied Physics Letters, Vol. 65, No. 6, 1994, p. 737-739.

Research output: Contribution to journalArticle

Weir, BE, Feldman, LC, Monroe, D, Grossmann, HJ, Headrick, RL & Hart, TR 1994, 'Electrical characterization of an ultrahigh concentration boron delta-doping layer', Applied Physics Letters, vol. 65, no. 6, pp. 737-739. https://doi.org/10.1063/1.112215
Weir, B. E. ; Feldman, L. C. ; Monroe, D. ; Grossmann, H. J. ; Headrick, R. L. ; Hart, T. R. / Electrical characterization of an ultrahigh concentration boron delta-doping layer. In: Applied Physics Letters. 1994 ; Vol. 65, No. 6. pp. 737-739.
@article{7cc17d701fce467183b8e266ca786dad,
title = "Electrical characterization of an ultrahigh concentration boron delta-doping layer",
abstract = "We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.",
author = "Weir, {B. E.} and Feldman, {L. C.} and D. Monroe and Grossmann, {H. J.} and Headrick, {R. L.} and Hart, {T. R.}",
year = "1994",
doi = "10.1063/1.112215",
language = "English",
volume = "65",
pages = "737--739",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Electrical characterization of an ultrahigh concentration boron delta-doping layer

AU - Weir, B. E.

AU - Feldman, L. C.

AU - Monroe, D.

AU - Grossmann, H. J.

AU - Headrick, R. L.

AU - Hart, T. R.

PY - 1994

Y1 - 1994

N2 - We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

AB - We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

UR - http://www.scopus.com/inward/record.url?scp=2842547235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2842547235&partnerID=8YFLogxK

U2 - 10.1063/1.112215

DO - 10.1063/1.112215

M3 - Article

VL - 65

SP - 737

EP - 739

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -