Electrical characterization of an ultrahigh concentration boron delta-doping layer

B. E. Weir, L. C. Feldman, D. Monroe, H. J. Grossmann, R. L. Headrick, T. R. Hart

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Abstract

We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

Original languageEnglish
Pages (from-to)737-739
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number6
DOIs
Publication statusPublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Weir, B. E., Feldman, L. C., Monroe, D., Grossmann, H. J., Headrick, R. L., & Hart, T. R. (1994). Electrical characterization of an ultrahigh concentration boron delta-doping layer. Applied Physics Letters, 65(6), 737-739. https://doi.org/10.1063/1.112215