Electrical characterization of an ultrahigh concentration boron delta-doping layer

B. E. Weir; L. C. Feldman; D. Monroe; H. J. Grossmann; R. L. Headrick; T. R. Hart

doi:10.1063/1.112215

Electrical characterization of an ultrahigh concentration boron delta-doping layer

B. E. Weir, L. C. Feldman, D. Monroe, H. J. Grossmann, R. L. Headrick, T. R. Hart

Rutgers University

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×10²² cm^-3 and a mobility of ∼20 cm²/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

Original language	English
Pages (from-to)	737-739
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	6
DOIs	https://doi.org/10.1063/1.112215
Publication status	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.",

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AU - Weir, B. E.

AU - Feldman, L. C.

AU - Monroe, D.

AU - Grossmann, H. J.

AU - Headrick, R. L.

AU - Hart, T. R.

PY - 1994/12/1

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N2 - We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

AB - We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.

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Electrical characterization of an ultrahigh concentration boron delta-doping layer

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