Abstract
We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm-3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.
Original language | English |
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Pages (from-to) | 737-739 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 6 |
DOIs | |
Publication status | Published - Dec 1 1994 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)