Electrical conduction in the Si(111): B-(3 × 3) R30°/a-Si interface reconstruction

R. L. Headrick, A. F J Levi, H. S. Luftman, J. Kovalchick, Leonard C Feldman

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Abstract

One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (3 × 3) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (>1014/cm2) in an ordered two-dimensional interface layer.

Original languageEnglish
Pages (from-to)14711-14714
Number of pages4
JournalPhysical Review B
Volume43
Issue number18
DOIs
Publication statusPublished - 1991

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ASJC Scopus subject areas

  • Condensed Matter Physics

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