Electrical conduction in the Si(111)

B-(3 × 3) R30°/a-Si interface reconstruction

R. L. Headrick, A. F J Levi, H. S. Luftman, J. Kovalchick, Leonard C Feldman

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (3 × 3) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (>1014/cm2) in an ordered two-dimensional interface layer.

Original languageEnglish
Pages (from-to)14711-14714
Number of pages4
JournalPhysical Review B
Volume43
Issue number18
DOIs
Publication statusPublished - 1991

Fingerprint

Boron
Monolayers
Crystalline materials
conduction
boron
Ultrahigh vacuum
Silicon
Amorphous silicon
Carrier concentration
leaves
ultrahigh vacuum
amorphous silicon
electrical resistivity
silicon
Electric Conductivity

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electrical conduction in the Si(111) : B-(3 × 3) R30°/a-Si interface reconstruction. / Headrick, R. L.; Levi, A. F J; Luftman, H. S.; Kovalchick, J.; Feldman, Leonard C.

In: Physical Review B, Vol. 43, No. 18, 1991, p. 14711-14714.

Research output: Contribution to journalArticle

Headrick, R. L. ; Levi, A. F J ; Luftman, H. S. ; Kovalchick, J. ; Feldman, Leonard C. / Electrical conduction in the Si(111) : B-(3 × 3) R30°/a-Si interface reconstruction. In: Physical Review B. 1991 ; Vol. 43, No. 18. pp. 14711-14714.
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