One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (3 × 3) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (>1014/cm2) in an ordered two-dimensional interface layer.
ASJC Scopus subject areas
- Condensed Matter Physics