Electrical conduction in the Si(111):B-(3 × 3) R30°/a-Si interface reconstruction

R. L. Headrick; A. F.J. Levi; H. S. Luftman; J. Kovalchick; L. C. Feldman

doi:10.1103/PhysRevB.43.14711

Electrical conduction in the Si(111):B-(3 × 3) R30°/a-Si interface reconstruction

R. L. Headrick, A. F.J. Levi, H. S. Luftman, J. Kovalchick, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (3 × 3) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (>1014/cm2) in an ordered two-dimensional interface layer.

Original language	English
Pages (from-to)	14711-14714
Number of pages	4
Journal	Physical Review B
Volume	43
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevB.43.14711
Publication status	Published - 1991

ASJC Scopus subject areas

Condensed Matter Physics

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AU - Feldman, L. C.

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