Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET

Bharath R. Takulapalli, Gez M. Laws, Paul A. Liddell, Joakim Andréasson, Zach Erno, John Devens Gust, Trevor J. Thornton

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A close-packed monolayer of zinc 5,10,15,20-tetrakis(3-carboxyphenyl) porphyrin has been prepared and deposited on the thin native oxide covering the surface of an SOI-MOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor) using Langmuir-Blodgett techniques. When the device is exposed to amine vapors in a nitrogen atmosphere, the amine coordinates to the zinc atom. The resulting change in electron distribution within the porphyrin leads to a large change in the drain current of the transistor, biased via a back gate. This change is sensitive to both the amount of amine present and the base strength of the amine. Only very small changes in drain current were observed with a monolayer of free base porphyrin or palmitic acid. After exposure to high pyridine concentrations, the device response saturates, but partially recovers after overnight exposure to flowing nitrogen gas. Interestingly, the device response is instantaneously reset by exposure to visible light, suggesting that photode-ligation occurs. An electrical model for the hybrid device that describes its response to ligand binding in terms of a change in the work function of the porphyrin monolayer has been developed. A transistor response to a few hundred attomoles of bound pyridine can be readily detected. This extreme sensitivity, coupled with the ability to reset the device using light, suggests that such systems might be useful as sensors.

Original languageEnglish
Pages (from-to)2226-2233
Number of pages8
JournalJournal of the American Chemical Society
Volume130
Issue number7
DOIs
Publication statusPublished - Feb 20 2008

Fingerprint

Metalloporphyrins
Semiconductors
Porphyrins
MOSFET devices
Silicon
Oxides
Amines
Ligation
Metals
Monolayers
Equipment and Supplies
Drain current
Pyridine
Zinc
Transistors
Nitrogen
Palmitic acid
Palmitic Acid
Light
Atmosphere

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Takulapalli, B. R., Laws, G. M., Liddell, P. A., Andréasson, J., Erno, Z., Gust, J. D., & Thornton, T. J. (2008). Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET. Journal of the American Chemical Society, 130(7), 2226-2233. https://doi.org/10.1021/ja076328a

Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET. / Takulapalli, Bharath R.; Laws, Gez M.; Liddell, Paul A.; Andréasson, Joakim; Erno, Zach; Gust, John Devens; Thornton, Trevor J.

In: Journal of the American Chemical Society, Vol. 130, No. 7, 20.02.2008, p. 2226-2233.

Research output: Contribution to journalArticle

Takulapalli, BR, Laws, GM, Liddell, PA, Andréasson, J, Erno, Z, Gust, JD & Thornton, TJ 2008, 'Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET', Journal of the American Chemical Society, vol. 130, no. 7, pp. 2226-2233. https://doi.org/10.1021/ja076328a
Takulapalli, Bharath R. ; Laws, Gez M. ; Liddell, Paul A. ; Andréasson, Joakim ; Erno, Zach ; Gust, John Devens ; Thornton, Trevor J. / Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET. In: Journal of the American Chemical Society. 2008 ; Vol. 130, No. 7. pp. 2226-2233.
@article{c073f9872403471f8c25bd5671fc82ac,
title = "Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET",
abstract = "A close-packed monolayer of zinc 5,10,15,20-tetrakis(3-carboxyphenyl) porphyrin has been prepared and deposited on the thin native oxide covering the surface of an SOI-MOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor) using Langmuir-Blodgett techniques. When the device is exposed to amine vapors in a nitrogen atmosphere, the amine coordinates to the zinc atom. The resulting change in electron distribution within the porphyrin leads to a large change in the drain current of the transistor, biased via a back gate. This change is sensitive to both the amount of amine present and the base strength of the amine. Only very small changes in drain current were observed with a monolayer of free base porphyrin or palmitic acid. After exposure to high pyridine concentrations, the device response saturates, but partially recovers after overnight exposure to flowing nitrogen gas. Interestingly, the device response is instantaneously reset by exposure to visible light, suggesting that photode-ligation occurs. An electrical model for the hybrid device that describes its response to ligand binding in terms of a change in the work function of the porphyrin monolayer has been developed. A transistor response to a few hundred attomoles of bound pyridine can be readily detected. This extreme sensitivity, coupled with the ability to reset the device using light, suggests that such systems might be useful as sensors.",
author = "Takulapalli, {Bharath R.} and Laws, {Gez M.} and Liddell, {Paul A.} and Joakim Andr{\'e}asson and Zach Erno and Gust, {John Devens} and Thornton, {Trevor J.}",
year = "2008",
month = "2",
day = "20",
doi = "10.1021/ja076328a",
language = "English",
volume = "130",
pages = "2226--2233",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET

AU - Takulapalli, Bharath R.

AU - Laws, Gez M.

AU - Liddell, Paul A.

AU - Andréasson, Joakim

AU - Erno, Zach

AU - Gust, John Devens

AU - Thornton, Trevor J.

PY - 2008/2/20

Y1 - 2008/2/20

N2 - A close-packed monolayer of zinc 5,10,15,20-tetrakis(3-carboxyphenyl) porphyrin has been prepared and deposited on the thin native oxide covering the surface of an SOI-MOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor) using Langmuir-Blodgett techniques. When the device is exposed to amine vapors in a nitrogen atmosphere, the amine coordinates to the zinc atom. The resulting change in electron distribution within the porphyrin leads to a large change in the drain current of the transistor, biased via a back gate. This change is sensitive to both the amount of amine present and the base strength of the amine. Only very small changes in drain current were observed with a monolayer of free base porphyrin or palmitic acid. After exposure to high pyridine concentrations, the device response saturates, but partially recovers after overnight exposure to flowing nitrogen gas. Interestingly, the device response is instantaneously reset by exposure to visible light, suggesting that photode-ligation occurs. An electrical model for the hybrid device that describes its response to ligand binding in terms of a change in the work function of the porphyrin monolayer has been developed. A transistor response to a few hundred attomoles of bound pyridine can be readily detected. This extreme sensitivity, coupled with the ability to reset the device using light, suggests that such systems might be useful as sensors.

AB - A close-packed monolayer of zinc 5,10,15,20-tetrakis(3-carboxyphenyl) porphyrin has been prepared and deposited on the thin native oxide covering the surface of an SOI-MOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor) using Langmuir-Blodgett techniques. When the device is exposed to amine vapors in a nitrogen atmosphere, the amine coordinates to the zinc atom. The resulting change in electron distribution within the porphyrin leads to a large change in the drain current of the transistor, biased via a back gate. This change is sensitive to both the amount of amine present and the base strength of the amine. Only very small changes in drain current were observed with a monolayer of free base porphyrin or palmitic acid. After exposure to high pyridine concentrations, the device response saturates, but partially recovers after overnight exposure to flowing nitrogen gas. Interestingly, the device response is instantaneously reset by exposure to visible light, suggesting that photode-ligation occurs. An electrical model for the hybrid device that describes its response to ligand binding in terms of a change in the work function of the porphyrin monolayer has been developed. A transistor response to a few hundred attomoles of bound pyridine can be readily detected. This extreme sensitivity, coupled with the ability to reset the device using light, suggests that such systems might be useful as sensors.

UR - http://www.scopus.com/inward/record.url?scp=39549089122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39549089122&partnerID=8YFLogxK

U2 - 10.1021/ja076328a

DO - 10.1021/ja076328a

M3 - Article

VL - 130

SP - 2226

EP - 2233

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 7

ER -