Electrical junction behavior of Poly(3,4-ethylenedioxythiophene) (PEDOT) contacts to H-terminated and CH3-Terminated p-, n-, and n +-Si(111) surfaces

Michael G. Walter, Xueliang Liu, Leslie E. O'Leary, Bruce S. Brunschwig, Nathan S Lewis

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The electronic and photovoltaic properties of junctions between the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) and Si(111) surfaces have been investigated for a range of doping types, doping levels, and surface functionalization of the Si. PEDOT-poly(styrenesulfonate) (PSS) formed ohmic, low resistance contacts to H-terminated and CH3-terminated p-type Si(111) surfaces. In contrast, PEDOT formed high barrier height (0.8-1.0 V) contacts to n-Si(111) surfaces, with CH3-terminated n-Si(111)/PEDOT contacts showing slightly higher barrier heights (1.01 eV) than H-terminated n-Si(111)/PEDOT contacts (0.89 V). PEDOT contacts to CH3-terminated and H-terminated n-Si(111) surfaces both produced photovoltages under illumination in accord with the Shockley diode limit based on bulk/recombination diffusion in the semiconductor. Such devices produced solar energy-conversion efficiencies of 5.7% under 100 mW cm-2 of simulated air mass 1.5 illumination. The electrical properties of PEDOT contacts to CH 3-terminated Si surfaces were significantly more stable in an air ambient than the electrical properties of PEDOT contacts to H-terminated Si surfaces. PEDOT films produced a low resistance, tunnel-barrier type of ohmic contact to n+-Si(111) surfaces. Hence, through various combinations of doping type, doping level, and surface functionalization, the PEDOT/Si contact system offers a wide range of opportunities for integration into monolithic photovoltaic and/or artificial photosynthetic systems.

Original languageEnglish
Pages (from-to)14485-14492
Number of pages8
JournalJournal of Physical Chemistry C
Volume117
Issue number28
DOIs
Publication statusPublished - Jul 18 2013

Fingerprint

Doping (additives)
low resistance
electric contacts
Electric properties
Lighting
illumination
electrical properties
poly(3,4-ethylene dioxythiophene)
solar energy conversion
Ohmic contacts
energy conversion efficiency
air masses
photovoltages
Conducting polymers
conducting polymers
Contact resistance
Air
Energy conversion
Contacts (fluid mechanics)
Solar energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Electrical junction behavior of Poly(3,4-ethylenedioxythiophene) (PEDOT) contacts to H-terminated and CH3-Terminated p-, n-, and n +-Si(111) surfaces. / Walter, Michael G.; Liu, Xueliang; O'Leary, Leslie E.; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Journal of Physical Chemistry C, Vol. 117, No. 28, 18.07.2013, p. 14485-14492.

Research output: Contribution to journalArticle

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abstract = "The electronic and photovoltaic properties of junctions between the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) and Si(111) surfaces have been investigated for a range of doping types, doping levels, and surface functionalization of the Si. PEDOT-poly(styrenesulfonate) (PSS) formed ohmic, low resistance contacts to H-terminated and CH3-terminated p-type Si(111) surfaces. In contrast, PEDOT formed high barrier height (0.8-1.0 V) contacts to n-Si(111) surfaces, with CH3-terminated n-Si(111)/PEDOT contacts showing slightly higher barrier heights (1.01 eV) than H-terminated n-Si(111)/PEDOT contacts (0.89 V). PEDOT contacts to CH3-terminated and H-terminated n-Si(111) surfaces both produced photovoltages under illumination in accord with the Shockley diode limit based on bulk/recombination diffusion in the semiconductor. Such devices produced solar energy-conversion efficiencies of 5.7{\%} under 100 mW cm-2 of simulated air mass 1.5 illumination. The electrical properties of PEDOT contacts to CH 3-terminated Si surfaces were significantly more stable in an air ambient than the electrical properties of PEDOT contacts to H-terminated Si surfaces. PEDOT films produced a low resistance, tunnel-barrier type of ohmic contact to n+-Si(111) surfaces. Hence, through various combinations of doping type, doping level, and surface functionalization, the PEDOT/Si contact system offers a wide range of opportunities for integration into monolithic photovoltaic and/or artificial photosynthetic systems.",
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