Electrical modification of ZnO nanodevices by a pulsed-laser deposited Al 2O 3 film

Jianye Li, D. Bruce Buchholz, Ming Zhang, Robert P. H. Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Modification of the electrical properties of individual single-crystalline ZnO nanowire devices by a pulsedlaser deposition of a thin insulating Al 2O 3 layer is reported. Through the reduction of O 2 - ion concentration on the nanowire surface by the Al 2O 3 layer, the electron concentration in the nanowire is increased and, as a result, the current of the nanodevice enhanced. The degree to which the conductivity of the device increased is related to the ratio of Zn to O in the nanowire, and the ratio in turn is related to the growth temperature of the ZnO nanowires. The percentage change in electrical behavior of the nanodevice fabricated from ZnO nanowires grown in a lower temperature zone with a greater Zn to O ratio was less.

Original languageEnglish
Pages (from-to)19686-19689
Number of pages4
JournalJournal of Physical Chemistry C
Volume112
Issue number49
DOIs
Publication statusPublished - Dec 11 2008

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Pulsed lasers
Nanowires
pulsed lasers
nanowires
Growth temperature
ion concentration
Electric properties
electrical properties
Ions
Crystalline materials
conductivity
Electrons
electrons
Temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Electrical modification of ZnO nanodevices by a pulsed-laser deposited Al 2O 3 film. / Li, Jianye; Buchholz, D. Bruce; Zhang, Ming; Chang, Robert P. H.

In: Journal of Physical Chemistry C, Vol. 112, No. 49, 11.12.2008, p. 19686-19689.

Research output: Contribution to journalArticle

Li, Jianye ; Buchholz, D. Bruce ; Zhang, Ming ; Chang, Robert P. H. / Electrical modification of ZnO nanodevices by a pulsed-laser deposited Al 2O 3 film. In: Journal of Physical Chemistry C. 2008 ; Vol. 112, No. 49. pp. 19686-19689.
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