Electrical modification of ZnO nanodevices by a pulsed-laser deposited Al 2O 3 film

Jianye Li, D. Bruce Buchholz, Ming Zhang, Robert P.H. Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Modification of the electrical properties of individual single-crystalline ZnO nanowire devices by a pulsedlaser deposition of a thin insulating Al 2O 3 layer is reported. Through the reduction of O 2 - ion concentration on the nanowire surface by the Al 2O 3 layer, the electron concentration in the nanowire is increased and, as a result, the current of the nanodevice enhanced. The degree to which the conductivity of the device increased is related to the ratio of Zn to O in the nanowire, and the ratio in turn is related to the growth temperature of the ZnO nanowires. The percentage change in electrical behavior of the nanodevice fabricated from ZnO nanowires grown in a lower temperature zone with a greater Zn to O ratio was less.

Original languageEnglish
Pages (from-to)19686-19689
Number of pages4
JournalJournal of Physical Chemistry C
Issue number49
Publication statusPublished - Dec 11 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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