Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials

Jon L. Schindler, Tim P. Hogan, Paul W. Brazis, Carl R. Kannewurf, Duck Young Chung, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈+110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈240 S/cm, but a larger n-type thermopower ≈-200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈0.32 at 260 K and for β-K2Bi8Se13 ZT≈0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Number of pages6
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 3 1997


OtherProceedings of the 1997 MRS Spring Symposium
CitySan Francisco, CA, USA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Schindler, J. L., Hogan, T. P., Brazis, P. W., Kannewurf, C. R., Chung, D. Y., & Kanatzidis, M. G. (1997). Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials. In Materials Research Society Symposium - Proceedings (Vol. 478, pp. 327-332). MRS.