Electrically addressable multistate volatile memory with flip-flop and flip-flap-flop logic circuits on a solid support

Graham De Ruiter, Leila Motiei, Joyanta Choudhury, Noa Oded, Milko van der Boom

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

Chemical Equation Presentation Flip-flopping away: Multivalue random access memory can be achieved using electrically addressable Os2+-based multilayers. The controllable optical properties of the multilayers allow the construction of memory devices that are able to store up to five different states that depend on the given electrical inputs (see picture). The functions of the devices can be represented by sequential logic circuits that are equivalent to flip-flop and flipflap-flop devices.

Original languageEnglish
Pages (from-to)4780-4783
Number of pages4
JournalAngewandte Chemie - International Edition
Volume49
Issue number28
DOIs
Publication statusPublished - Jun 28 2010

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Flaps
Flip flop circuits
Logic circuits
Multilayers
Data storage equipment
Sequential circuits
Optical properties

Keywords

  • Boolean logic
  • Molecular devices
  • Osmium
  • Surface chemistry
  • Thin films

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis

Cite this

Electrically addressable multistate volatile memory with flip-flop and flip-flap-flop logic circuits on a solid support. / De Ruiter, Graham; Motiei, Leila; Choudhury, Joyanta; Oded, Noa; van der Boom, Milko.

In: Angewandte Chemie - International Edition, Vol. 49, No. 28, 28.06.2010, p. 4780-4783.

Research output: Contribution to journalArticle

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