Electrically addressable multistate volatile memory with flip-flop and flip-flap-flop logic circuits on a solid support

Graham De Ruiter; Leila Motiei; Joyanta Choudhury; Noa Oded; Milko E. Van Der Boom

doi:10.1002/anie.201000785

Electrically addressable multistate volatile memory with flip-flop and flip-flap-flop logic circuits on a solid support

Graham De Ruiter, Leila Motiei, Joyanta Choudhury, Noa Oded, Milko E. Van Der Boom

Weizmann Institute of Science, Israel

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

Chemical Equation Presentation Flip-flopping away: Multivalue random access memory can be achieved using electrically addressable Os²⁺-based multilayers. The controllable optical properties of the multilayers allow the construction of memory devices that are able to store up to five different states that depend on the given electrical inputs (see picture). The functions of the devices can be represented by sequential logic circuits that are equivalent to flip-flop and flipflap-flop devices.

Original language	English
Pages (from-to)	4780-4783
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	49
Issue number	28
DOIs	https://doi.org/10.1002/anie.201000785
Publication status	Published - Jun 28 2010

Keywords

Boolean logic
Molecular devices
Osmium
Surface chemistry
Thin films

ASJC Scopus subject areas

Catalysis
Chemistry(all)

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10.1002/anie.201000785

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abstract = "Chemical Equation Presentation Flip-flopping away: Multivalue random access memory can be achieved using electrically addressable Os2+-based multilayers. The controllable optical properties of the multilayers allow the construction of memory devices that are able to store up to five different states that depend on the given electrical inputs (see picture). The functions of the devices can be represented by sequential logic circuits that are equivalent to flip-flop and flipflap-flop devices.",

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