Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes

Fei Yi, Fang Ou, Boyang Liu, Yingyan Huang, Seng Tiong Ho, Yiliang Wang, Jun Liu, Tobin J. Marks, Su Huang, Jingdong Luo, Alex K.Y. Jen, Raluca Dinu, Dan Jin

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Abstract

An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vπ of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VπL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm2 of power length product) in a dual-drive configuration. The trade-off between Vπ, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve V π = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.

Original languageEnglish
Pages (from-to)6779-6796
Number of pages18
JournalOptics express
Volume18
Issue number7
DOIs
Publication statusPublished - Mar 29 2010

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Yi, F., Ou, F., Liu, B., Huang, Y., Ho, S. T., Wang, Y., Liu, J., Marks, T. J., Huang, S., Luo, J., Jen, A. K. Y., Dinu, R., & Jin, D. (2010). Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes. Optics express, 18(7), 6779-6796. https://doi.org/10.1364/OE.18.006779