Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes

Fei Yi, Fang Ou, Boyang Liu, Yingyan Huang, Seng Tiong Ho, Yiliang Wang, Jun Liu, Tobin J Marks, Su Huang, Jingdong Luo, Alex K Y Jen, Raluca Dinu, Dan Jin

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vπ of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VπL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm2 of power length product) in a dual-drive configuration. The trade-off between Vπ, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve V π = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.

Original languageEnglish
Pages (from-to)6779-6796
Number of pages18
JournalOptics Express
Volume18
Issue number7
DOIs
Publication statusPublished - Mar 29 2010

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electro-optics
modulators
conduction
electrodes
insertion loss
bandwidth
light modulation
figure of merit
high speed
waveguides
modulation
oxides
polymers
electric potential
products
geometry
configurations
simulation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes. / Yi, Fei; Ou, Fang; Liu, Boyang; Huang, Yingyan; Ho, Seng Tiong; Wang, Yiliang; Liu, Jun; Marks, Tobin J; Huang, Su; Luo, Jingdong; Jen, Alex K Y; Dinu, Raluca; Jin, Dan.

In: Optics Express, Vol. 18, No. 7, 29.03.2010, p. 6779-6796.

Research output: Contribution to journalArticle

Yi, F, Ou, F, Liu, B, Huang, Y, Ho, ST, Wang, Y, Liu, J, Marks, TJ, Huang, S, Luo, J, Jen, AKY, Dinu, R & Jin, D 2010, 'Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes', Optics Express, vol. 18, no. 7, pp. 6779-6796. https://doi.org/10.1364/OE.18.006779
Yi, Fei ; Ou, Fang ; Liu, Boyang ; Huang, Yingyan ; Ho, Seng Tiong ; Wang, Yiliang ; Liu, Jun ; Marks, Tobin J ; Huang, Su ; Luo, Jingdong ; Jen, Alex K Y ; Dinu, Raluca ; Jin, Dan. / Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes. In: Optics Express. 2010 ; Vol. 18, No. 7. pp. 6779-6796.
@article{8eedbc3cf32444dfb75d4a68d1c1f132,
title = "Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes",
abstract = "An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vπ of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VπL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm2 of power length product) in a dual-drive configuration. The trade-off between Vπ, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve V π = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.",
author = "Fei Yi and Fang Ou and Boyang Liu and Yingyan Huang and Ho, {Seng Tiong} and Yiliang Wang and Jun Liu and Marks, {Tobin J} and Su Huang and Jingdong Luo and Jen, {Alex K Y} and Raluca Dinu and Dan Jin",
year = "2010",
month = "3",
day = "29",
doi = "10.1364/OE.18.006779",
language = "English",
volume = "18",
pages = "6779--6796",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "7",

}

TY - JOUR

T1 - Electro-optic modulator with exceptional powersize performance enabled by transparent conducting electrodes

AU - Yi, Fei

AU - Ou, Fang

AU - Liu, Boyang

AU - Huang, Yingyan

AU - Ho, Seng Tiong

AU - Wang, Yiliang

AU - Liu, Jun

AU - Marks, Tobin J

AU - Huang, Su

AU - Luo, Jingdong

AU - Jen, Alex K Y

AU - Dinu, Raluca

AU - Jin, Dan

PY - 2010/3/29

Y1 - 2010/3/29

N2 - An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vπ of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VπL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm2 of power length product) in a dual-drive configuration. The trade-off between Vπ, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve V π = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.

AB - An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vπ of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VπL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm2 of power length product) in a dual-drive configuration. The trade-off between Vπ, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve V π = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.

UR - http://www.scopus.com/inward/record.url?scp=77950287312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950287312&partnerID=8YFLogxK

U2 - 10.1364/OE.18.006779

DO - 10.1364/OE.18.006779

M3 - Article

C2 - 20389698

AN - SCOPUS:77950287312

VL - 18

SP - 6779

EP - 6796

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 7

ER -