Electron and hole trapping dynamics in semiconductor nanocrystals: femtosecond nonlinear transmission and photoluminescence study

Victor I Klimov, D. McBranch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Application of two complementary femtosecond techniques (time-resolved nonlinear transmission and photoluminescence up-conversion) allows us to observe separately the electron and the hole relaxation paths in CdS nanocrystals. The obtained data indicate that hole relaxation channels are different at low and high pump fluences which is attributed to an Auger-process-assisted hole trapping at surface/interface states activated at high excitation intensities.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada, A.P. Alivisatos
PublisherMaterials Research Society
Pages317-322
Number of pages6
Volume452
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/2/9612/6/96

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Klimov, V. I., & McBranch, D. (1997). Electron and hole trapping dynamics in semiconductor nanocrystals: femtosecond nonlinear transmission and photoluminescence study. In R. W. Collins, P. M. Fauchet, I. Shimizu, J. C. Vial, T. Shimada, & A. P. Alivisatos (Eds.), Materials Research Society Symposium - Proceedings (Vol. 452, pp. 317-322). Materials Research Society.