Electron beam induced current imaging of ferroelectric thin films

Igor Lubomirsky, Tzu Y.U. Wang, Konstantin Gartsman, Oscar M. Stafsudd

Research output: Contribution to journalConference article

Abstract

We have observed Electron Beam Induced Current imaging of thin film ferroelectrics. The Electron beam irradiation of a thin ferroelectric film creates a local temperature gradient that induces a polarization gradient and therefore a local electric field. Although the temperature difference is small the gradient is on the order of thousands K/cm and results in a corresponding electric field of a few MV/cm. The thermally induced electric field drives the electron beam created carriers toward an electrode thus inducing an externally measurable current. Despite the very small carrier life time (<1 ns) in ferroelectrics, the induced electric field is strong enough to collect carriers from a few hundred nm depth before recombination. An EBIC gain of 5 to 20 was measured experimentally with BaTiU3 and LiTaOj films on silicon substrates. This method is insensitive to charge traps and provides a resolution better than l um.

Original languageEnglish
Pages (from-to)101-106
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume574
DOIs
Publication statusPublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States
Duration: Apr 6 1999Apr 8 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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