Electron-beam-induced patterned deposition of allylcyclopentadienyl palladium using scanning tunneling microscopy

D. S. Saulys, A. Ermakov, Eric Garfunkel, P. A. Dowben

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Scanning tunneling microscopy has been used to study the electron-induced decomposition of allylcyclopentadienyl palladium [Pd(η3-C 3H5)(η5-C5H5)] and subsequent deposition on a Si(111) surface. Deposition occurs via an electron impact mechanism on either the tip or surface, depending on the bias polarity, and is observed with voltages of ≥2.75 V. This is close to the predicted condensed phase dissociation energy of 2.3 eV for Pd(η3-C 3H5)(η5-C5H5) →Pd+C3H5+C5H5. Metallic deposits of nanometer dimensions can be written on the surface. Deposition onto an electrochemically etched tip results in a narrow conductive secondary tip which gives improved spatial resolution when imaging high-aspect ratio features on the surface.

Original languageEnglish
Pages (from-to)7639-7641
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number11
DOIs
Publication statusPublished - 1994

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scanning tunneling microscopy
palladium
electron beams
high aspect ratio
electron impact
polarity
spatial resolution
deposits
dissociation
decomposition
electric potential
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron-beam-induced patterned deposition of allylcyclopentadienyl palladium using scanning tunneling microscopy. / Saulys, D. S.; Ermakov, A.; Garfunkel, Eric; Dowben, P. A.

In: Journal of Applied Physics, Vol. 76, No. 11, 1994, p. 7639-7641.

Research output: Contribution to journalArticle

@article{7066f30b80d14104a624073c0cd3f61e,
title = "Electron-beam-induced patterned deposition of allylcyclopentadienyl palladium using scanning tunneling microscopy",
abstract = "Scanning tunneling microscopy has been used to study the electron-induced decomposition of allylcyclopentadienyl palladium [Pd(η3-C 3H5)(η5-C5H5)] and subsequent deposition on a Si(111) surface. Deposition occurs via an electron impact mechanism on either the tip or surface, depending on the bias polarity, and is observed with voltages of ≥2.75 V. This is close to the predicted condensed phase dissociation energy of 2.3 eV for Pd(η3-C 3H5)(η5-C5H5) →Pd+C3H5+C5H5. Metallic deposits of nanometer dimensions can be written on the surface. Deposition onto an electrochemically etched tip results in a narrow conductive secondary tip which gives improved spatial resolution when imaging high-aspect ratio features on the surface.",
author = "Saulys, {D. S.} and A. Ermakov and Eric Garfunkel and Dowben, {P. A.}",
year = "1994",
doi = "10.1063/1.357935",
language = "English",
volume = "76",
pages = "7639--7641",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Electron-beam-induced patterned deposition of allylcyclopentadienyl palladium using scanning tunneling microscopy

AU - Saulys, D. S.

AU - Ermakov, A.

AU - Garfunkel, Eric

AU - Dowben, P. A.

PY - 1994

Y1 - 1994

N2 - Scanning tunneling microscopy has been used to study the electron-induced decomposition of allylcyclopentadienyl palladium [Pd(η3-C 3H5)(η5-C5H5)] and subsequent deposition on a Si(111) surface. Deposition occurs via an electron impact mechanism on either the tip or surface, depending on the bias polarity, and is observed with voltages of ≥2.75 V. This is close to the predicted condensed phase dissociation energy of 2.3 eV for Pd(η3-C 3H5)(η5-C5H5) →Pd+C3H5+C5H5. Metallic deposits of nanometer dimensions can be written on the surface. Deposition onto an electrochemically etched tip results in a narrow conductive secondary tip which gives improved spatial resolution when imaging high-aspect ratio features on the surface.

AB - Scanning tunneling microscopy has been used to study the electron-induced decomposition of allylcyclopentadienyl palladium [Pd(η3-C 3H5)(η5-C5H5)] and subsequent deposition on a Si(111) surface. Deposition occurs via an electron impact mechanism on either the tip or surface, depending on the bias polarity, and is observed with voltages of ≥2.75 V. This is close to the predicted condensed phase dissociation energy of 2.3 eV for Pd(η3-C 3H5)(η5-C5H5) →Pd+C3H5+C5H5. Metallic deposits of nanometer dimensions can be written on the surface. Deposition onto an electrochemically etched tip results in a narrow conductive secondary tip which gives improved spatial resolution when imaging high-aspect ratio features on the surface.

UR - http://www.scopus.com/inward/record.url?scp=0347438117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347438117&partnerID=8YFLogxK

U2 - 10.1063/1.357935

DO - 10.1063/1.357935

M3 - Article

AN - SCOPUS:0347438117

VL - 76

SP - 7639

EP - 7641

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -