Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The interface between the hole transport layer (HTL) and emissive layer (EML) in polymer light-emitting diodes (PLEDs) has attracted intense research attentioin since the initial discovery of PLEDs in 1989. In this contribution, we analyze the electron-blocking properties of various HTL at this interface and their effect on PLED device performance. We find that poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) - a conventional PLED HTL - does not possess optimum electron-blocking properties and that PLED device performance can be significantly enhanced by inserting a new type of electron-blocking layer (EBL) between the PEDOT-PSS HTL and EML. The new EBLs developed in this study consist of two major components: a siloxane-derivatized, crosslinkable, TPD-like triarylamine hole-transporting material, such as 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), and a hole-transporting polymer, such as poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl) diphenylamine) (TFB). TPDSi2 undergoes crosslinking in air and rendering the TPDSi2 + TFB blend insoluble. With the TPDSi2 + TFB EBL inserted between PEDOT-PSS and BT layers, PLED device current density is reduced, device light output and current efficiency are dramatically increased (maximum current efficiency ∼ 17 cd/A). Our result shows: 1) insufficient electron-blocking by PEDOT-PSS is another reason for the poor performance of PEDOT-PSS/BT based devices; 2) PLED device performance can be dramatically enhanced with a triarylamine siloxane-based EBLs.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsZ.H. Kafafi, P.A. Lane
Pages270-278
Number of pages9
Volume5519
DOIs
Publication statusPublished - 2004
EventOrganic Light-Emitting Materials and Devices VIII - Denver, CO, United States
Duration: Aug 2 2004Aug 4 2004

Other

OtherOrganic Light-Emitting Materials and Devices VIII
CountryUnited States
CityDenver, CO
Period8/2/048/4/04

Fingerprint

Light emitting diodes
interlayers
light emitting diodes
Electrons
polymers
Polymers
electrons
siloxanes
Temperature programmed desorption
Crosslinking
crosslinking
Current density
current density
Air
output
air

Keywords

  • Anode modification
  • Electron blocking
  • Hole transport layer
  • Polymer light-emitting diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yan, H., & Marks, T. J. (2004). Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer. In Z. H. Kafafi, & P. A. Lane (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5519, pp. 270-278). [53] https://doi.org/10.1117/12.559906

Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer. / Yan, He; Marks, Tobin J.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Z.H. Kafafi; P.A. Lane. Vol. 5519 2004. p. 270-278 53.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yan, H & Marks, TJ 2004, Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer. in ZH Kafafi & PA Lane (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5519, 53, pp. 270-278, Organic Light-Emitting Materials and Devices VIII, Denver, CO, United States, 8/2/04. https://doi.org/10.1117/12.559906
Yan, He ; Marks, Tobin J. / Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer. Proceedings of SPIE - The International Society for Optical Engineering. editor / Z.H. Kafafi ; P.A. Lane. Vol. 5519 2004. pp. 270-278
@inproceedings{61a7304c327940309ab0c5ada69b1bb1,
title = "Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer",
abstract = "The interface between the hole transport layer (HTL) and emissive layer (EML) in polymer light-emitting diodes (PLEDs) has attracted intense research attentioin since the initial discovery of PLEDs in 1989. In this contribution, we analyze the electron-blocking properties of various HTL at this interface and their effect on PLED device performance. We find that poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) - a conventional PLED HTL - does not possess optimum electron-blocking properties and that PLED device performance can be significantly enhanced by inserting a new type of electron-blocking layer (EBL) between the PEDOT-PSS HTL and EML. The new EBLs developed in this study consist of two major components: a siloxane-derivatized, crosslinkable, TPD-like triarylamine hole-transporting material, such as 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), and a hole-transporting polymer, such as poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl) diphenylamine) (TFB). TPDSi2 undergoes crosslinking in air and rendering the TPDSi2 + TFB blend insoluble. With the TPDSi2 + TFB EBL inserted between PEDOT-PSS and BT layers, PLED device current density is reduced, device light output and current efficiency are dramatically increased (maximum current efficiency ∼ 17 cd/A). Our result shows: 1) insufficient electron-blocking by PEDOT-PSS is another reason for the poor performance of PEDOT-PSS/BT based devices; 2) PLED device performance can be dramatically enhanced with a triarylamine siloxane-based EBLs.",
keywords = "Anode modification, Electron blocking, Hole transport layer, Polymer light-emitting diodes",
author = "He Yan and Marks, {Tobin J}",
year = "2004",
doi = "10.1117/12.559906",
language = "English",
volume = "5519",
pages = "270--278",
editor = "Z.H. Kafafi and P.A. Lane",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer

AU - Yan, He

AU - Marks, Tobin J

PY - 2004

Y1 - 2004

N2 - The interface between the hole transport layer (HTL) and emissive layer (EML) in polymer light-emitting diodes (PLEDs) has attracted intense research attentioin since the initial discovery of PLEDs in 1989. In this contribution, we analyze the electron-blocking properties of various HTL at this interface and their effect on PLED device performance. We find that poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) - a conventional PLED HTL - does not possess optimum electron-blocking properties and that PLED device performance can be significantly enhanced by inserting a new type of electron-blocking layer (EBL) between the PEDOT-PSS HTL and EML. The new EBLs developed in this study consist of two major components: a siloxane-derivatized, crosslinkable, TPD-like triarylamine hole-transporting material, such as 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), and a hole-transporting polymer, such as poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl) diphenylamine) (TFB). TPDSi2 undergoes crosslinking in air and rendering the TPDSi2 + TFB blend insoluble. With the TPDSi2 + TFB EBL inserted between PEDOT-PSS and BT layers, PLED device current density is reduced, device light output and current efficiency are dramatically increased (maximum current efficiency ∼ 17 cd/A). Our result shows: 1) insufficient electron-blocking by PEDOT-PSS is another reason for the poor performance of PEDOT-PSS/BT based devices; 2) PLED device performance can be dramatically enhanced with a triarylamine siloxane-based EBLs.

AB - The interface between the hole transport layer (HTL) and emissive layer (EML) in polymer light-emitting diodes (PLEDs) has attracted intense research attentioin since the initial discovery of PLEDs in 1989. In this contribution, we analyze the electron-blocking properties of various HTL at this interface and their effect on PLED device performance. We find that poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) - a conventional PLED HTL - does not possess optimum electron-blocking properties and that PLED device performance can be significantly enhanced by inserting a new type of electron-blocking layer (EBL) between the PEDOT-PSS HTL and EML. The new EBLs developed in this study consist of two major components: a siloxane-derivatized, crosslinkable, TPD-like triarylamine hole-transporting material, such as 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), and a hole-transporting polymer, such as poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl) diphenylamine) (TFB). TPDSi2 undergoes crosslinking in air and rendering the TPDSi2 + TFB blend insoluble. With the TPDSi2 + TFB EBL inserted between PEDOT-PSS and BT layers, PLED device current density is reduced, device light output and current efficiency are dramatically increased (maximum current efficiency ∼ 17 cd/A). Our result shows: 1) insufficient electron-blocking by PEDOT-PSS is another reason for the poor performance of PEDOT-PSS/BT based devices; 2) PLED device performance can be dramatically enhanced with a triarylamine siloxane-based EBLs.

KW - Anode modification

KW - Electron blocking

KW - Hole transport layer

KW - Polymer light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=13444254238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13444254238&partnerID=8YFLogxK

U2 - 10.1117/12.559906

DO - 10.1117/12.559906

M3 - Conference contribution

VL - 5519

SP - 270

EP - 278

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Kafafi, Z.H.

A2 - Lane, P.A.

ER -