Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC

Xudong Chen, Sarit Dhar, Tamara Isaacs-Smith, John R. Williams, Leonard C. Feldman, Patricia M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - Dec 1 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chen, X., Dhar, S., Isaacs-Smith, T., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2007). Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422264] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422264