Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC

Xudong Chen, Sarit Dhar, Tamara Isaacs-Smith, John R. Williams, Leonard C. Feldman, Patricia M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

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Interface states
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chen, X., Dhar, S., Isaacs-Smith, T., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2007). Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422264] https://doi.org/10.1109/ISDRS.2007.4422264

Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC. / Chen, Xudong; Dhar, Sarit; Isaacs-Smith, Tamara; Williams, John R.; Feldman, Leonard C.; Mooney, Patricia M.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422264.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, X, Dhar, S, Isaacs-Smith, T, Williams, JR, Feldman, LC & Mooney, PM 2007, Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422264, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422264
Chen X, Dhar S, Isaacs-Smith T, Williams JR, Feldman LC, Mooney PM. Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC. In 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422264 https://doi.org/10.1109/ISDRS.2007.4422264
Chen, Xudong ; Dhar, Sarit ; Isaacs-Smith, Tamara ; Williams, John R. ; Feldman, Leonard C. ; Mooney, Patricia M. / Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007.
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