Abstract
Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2 /4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2 /4H-SiC interfaces were performed using constant-capacitance deep level transient spectroscopy (CCDLTS) and double-CCDLTS. We show that the interface state density in as-oxidized samples consists of overlapping distributions of electron traps that have distinctly different capture cross sections. The dominant trap distributions, centered at Ec -0.24 eV with ∼7× 10-19 cm2, and at Ec -0.46 eV with ∼4× 10-17 cm2 are passivated by NO annealing. The remaining interface states all have capture cross sections in the range 10-19 - 10-21 cm2.
| Original language | English |
|---|---|
| Article number | 033701 |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2008 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC. / Chen, X. D.; Dhar, S.; Isaacs-Smith, T.; Williams, J. R.; Feldman, Leonard C; Mooney, P. M.
In: Journal of Applied Physics, Vol. 103, No. 3, 033701, 2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC
AU - Chen, X. D.
AU - Dhar, S.
AU - Isaacs-Smith, T.
AU - Williams, J. R.
AU - Feldman, Leonard C
AU - Mooney, P. M.
PY - 2008
Y1 - 2008
N2 - Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2 /4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2 /4H-SiC interfaces were performed using constant-capacitance deep level transient spectroscopy (CCDLTS) and double-CCDLTS. We show that the interface state density in as-oxidized samples consists of overlapping distributions of electron traps that have distinctly different capture cross sections. The dominant trap distributions, centered at Ec -0.24 eV with ∼7× 10-19 cm2, and at Ec -0.46 eV with ∼4× 10-17 cm2 are passivated by NO annealing. The remaining interface states all have capture cross sections in the range 10-19 - 10-21 cm2.
AB - Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2 /4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2 /4H-SiC interfaces were performed using constant-capacitance deep level transient spectroscopy (CCDLTS) and double-CCDLTS. We show that the interface state density in as-oxidized samples consists of overlapping distributions of electron traps that have distinctly different capture cross sections. The dominant trap distributions, centered at Ec -0.24 eV with ∼7× 10-19 cm2, and at Ec -0.46 eV with ∼4× 10-17 cm2 are passivated by NO annealing. The remaining interface states all have capture cross sections in the range 10-19 - 10-21 cm2.
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U2 - 10.1063/1.2837028
DO - 10.1063/1.2837028
M3 - Article
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
M1 - 033701
ER -