Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, Leonard C Feldman, P. M. Mooney

Research output: Contribution to journalArticle

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Abstract

Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2 /4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2 /4H-SiC interfaces were performed using constant-capacitance deep level transient spectroscopy (CCDLTS) and double-CCDLTS. We show that the interface state density in as-oxidized samples consists of overlapping distributions of electron traps that have distinctly different capture cross sections. The dominant trap distributions, centered at Ec -0.24 eV with ∼7× 10-19 cm2, and at Ec -0.46 eV with ∼4× 10-17 cm2 are passivated by NO annealing. The remaining interface states all have capture cross sections in the range 10-19 - 10-21 cm2.

Original languageEnglish
Article number033701
JournalJournal of Applied Physics
Volume103
Issue number3
DOIs
Publication statusPublished - 2008

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nitric oxide
electron capture
electron emission
absorption cross sections
capacitance
traps
annealing
spectroscopy
electrons
trapping
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC. / Chen, X. D.; Dhar, S.; Isaacs-Smith, T.; Williams, J. R.; Feldman, Leonard C; Mooney, P. M.

In: Journal of Applied Physics, Vol. 103, No. 3, 033701, 2008.

Research output: Contribution to journalArticle

Chen, X. D. ; Dhar, S. ; Isaacs-Smith, T. ; Williams, J. R. ; Feldman, Leonard C ; Mooney, P. M. / Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 3.
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AU - Mooney, P. M.

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