Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, P. M. Mooney

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51 Citations (Scopus)

Abstract

Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2 /4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2 /4H-SiC interfaces were performed using constant-capacitance deep level transient spectroscopy (CCDLTS) and double-CCDLTS. We show that the interface state density in as-oxidized samples consists of overlapping distributions of electron traps that have distinctly different capture cross sections. The dominant trap distributions, centered at Ec -0.24 eV with ∼7× 10-19 cm2, and at Ec -0.46 eV with ∼4× 10-17 cm2 are passivated by NO annealing. The remaining interface states all have capture cross sections in the range 10-19 - 10-21 cm2.

Original languageEnglish
Article number033701
JournalJournal of Applied Physics
Volume103
Issue number3
DOIs
Publication statusPublished - Feb 22 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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