Electron-Doped 1T-MoS2 via Interface Engineering for Enhanced Electrocatalytic Hydrogen Evolution

Qin Liu, Qi Fang, Wangsheng Chu, Yangyang Wan, Xiuling Li, Weiyu Xu, Muhammad Habib, Shi Tao, Yu Zhou, Daobin Liu, Ting Xiang, Adnan Khalil, Xiaojun Wu, Manish Chhowalla, Pulickel M. Ajayan, Li Song

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Abstract

Designing advanced electrocatalysts for hydrogen evolution reaction is of far-reaching significance. Active sites and conductivity play vital roles in such a process. Herein, we demonstrate a heteronanostructure for hydrogen evolution reaction, which consists of metallic 1T-MoS2 nanopatches grown on the surface of flexible single-walled carbon nanotube (1T-MoS2/SWNT) films. The simulated deformation charge density of the interface shows that 0.924 electron can be transferred from SWNT to 1T-MoS2, which weakens the absorption energy of H atom on electron-doped 1T-MoS2, resulting in superior electrocatalytic performance. The electron doping effect via interface engineering renders this heteronanostructure material outstanding hydrogen evolution reaction (HER) activity with initial overpotential as small as approximately 40 mV, a low Tafel slope of 36 mV/dec, 108 mV for 10 mA/cm2, and excellent stability. We propose that such interface engineering could be widely used to develop new catalysts for energy conversion application.

Original languageEnglish
Pages (from-to)4738-4744
Number of pages7
JournalChemistry of Materials
Volume29
Issue number11
DOIs
Publication statusPublished - Jun 13 2017

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ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Liu, Q., Fang, Q., Chu, W., Wan, Y., Li, X., Xu, W., Habib, M., Tao, S., Zhou, Y., Liu, D., Xiang, T., Khalil, A., Wu, X., Chhowalla, M., Ajayan, P. M., & Song, L. (2017). Electron-Doped 1T-MoS2 via Interface Engineering for Enhanced Electrocatalytic Hydrogen Evolution. Chemistry of Materials, 29(11), 4738-4744. https://doi.org/10.1021/acs.chemmater.7b00446