Electron emission from diamond induced by atomic and molecular ions

R. Kalish, E. Cheifetz, V. Richter, N. Koenigsfeld, Y. Avigal, L. C. Feldman

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8 Citations (Scopus)

Abstract

Extremely large ion-induced electron emission (IIEE) yields, γ, defined as the number of emitted electrons per incident projectile, were previously reported by us for impingement of sub-mega electron volt light (H) and heavy (N and Ar) ions onto hydrogenated, boron-doped diamond surfaces. γ was found to decrease rapidly with increasing ion dose, presumably because of ion- damage related modification of the emitting material. In this work, we compare γ for molecular impingement (H2 +, N2+) to that of the atom ion impingement (H+, N+) with the individual species having the same velocity. It is found that (i) the maximal IIEE yields (extrapolated to 0 dose) per atom for molecular impingement is smaller by 15-20% than that measured for the corresponding single ions. Yet they are still extremely large. (ii) The decay rates of γ per atom for molecular impingement are faster than those measured for the corresponding single ions, yet they still saturate at very high γ values. The present results bear on the physics of ion-solid interactions and on the applicability of diamond for the detection and counting of single ion and molecule.

Original languageEnglish
Pages (from-to)1685-1690
Number of pages6
JournalDiamond and Related Materials
Volume12
Issue number10-11
DOIs
Publication statusPublished - Jan 1 2003

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Keywords

  • Diamond films
  • Electron emission
  • Ion-beam bombardment
  • Molecular ion impingement
  • Radiation damage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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