Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors

T. G. McCauley, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, Robert P. H. Chang, S. English, R. J. Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages227-232
Number of pages6
Volume498
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period12/1/9712/4/97

Fingerprint

Fullerenes
Diamond
Electron emission
Field emission
Diamonds
Methane
Photoelectrons
Chemical vapor deposition
Microscopic examination
Microwaves
Plasmas
Finite element method
Electrons
fullerene C60

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

McCauley, T. G., Corrigan, T. D., Krauss, A. R., Auciello, O., Zhou, D., Gruen, D. M., ... Nemanich, R. J. (1997). Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. In Materials Research Society Symposium - Proceedings (Vol. 498, pp. 227-232). MRS.

Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. / McCauley, T. G.; Corrigan, T. D.; Krauss, A. R.; Auciello, O.; Zhou, D.; Gruen, D. M.; Temple, D.; Chang, Robert P. H.; English, S.; Nemanich, R. J.

Materials Research Society Symposium - Proceedings. Vol. 498 MRS, 1997. p. 227-232.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McCauley, TG, Corrigan, TD, Krauss, AR, Auciello, O, Zhou, D, Gruen, DM, Temple, D, Chang, RPH, English, S & Nemanich, RJ 1997, Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. in Materials Research Society Symposium - Proceedings. vol. 498, MRS, pp. 227-232, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 12/1/97.
McCauley TG, Corrigan TD, Krauss AR, Auciello O, Zhou D, Gruen DM et al. Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. In Materials Research Society Symposium - Proceedings. Vol. 498. MRS. 1997. p. 227-232
McCauley, T. G. ; Corrigan, T. D. ; Krauss, A. R. ; Auciello, O. ; Zhou, D. ; Gruen, D. M. ; Temple, D. ; Chang, Robert P. H. ; English, S. ; Nemanich, R. J. / Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. Materials Research Society Symposium - Proceedings. Vol. 498 MRS, 1997. pp. 227-232
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AU - Zhou, D.

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