Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors

T. G. McCauley, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, Robert P. H. Chang, S. English, R. J. Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages227-232
Number of pages6
Volume498
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period12/1/9712/4/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    McCauley, T. G., Corrigan, T. D., Krauss, A. R., Auciello, O., Zhou, D., Gruen, D. M., Temple, D., Chang, R. P. H., English, S., & Nemanich, R. J. (1997). Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. In Materials Research Society Symposium - Proceedings (Vol. 498, pp. 227-232). MRS.