Abstract
In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | MRS |
| Pages | 227-232 |
| Number of pages | 6 |
| Volume | 498 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997 |
Other
| Other | Proceedings of the 1997 MRS Fall Symposium |
|---|---|
| City | Boston, MA, USA |
| Period | 12/1/97 → 12/4/97 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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McCauley, T. G., Corrigan, T. D., Krauss, A. R., Auciello, O., Zhou, D., Gruen, D. M., Temple, D., Chang, R. P. H., English, S., & Nemanich, R. J. (1997). Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. In Materials Research Society Symposium - Proceedings (Vol. 498, pp. 227-232). MRS.