Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors

T. G. McCauley; T. D. Corrigan; A. R. Krauss; O. Auciello; D. Zhou; D. M. Gruen; D. Temple; Robert P. H. Chang; S. English; R. J. Nemanich

Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors

T. G. McCauley, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, Robert P. H. Chang, S. English, R. J. Nemanich

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C₆₀) and methane (CH₄) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	MRS
Pages	227-232
Number of pages	6
Volume	498
Publication status	Published - 1997
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

Other

Other	Proceedings of the 1997 MRS Fall Symposium
City	Boston, MA, USA
Period	12/1/97 → 12/4/97

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. / McCauley, T. G.; Corrigan, T. D.; Krauss, A. R.; Auciello, O.; Zhou, D.; Gruen, D. M.; Temple, D.; Chang, Robert P. H.; English, S.; Nemanich, R. J.

Materials Research Society Symposium - Proceedings. Vol. 498 MRS, 1997. p. 227-232.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

McCauley, TG, Corrigan, TD, Krauss, AR, Auciello, O, Zhou, D, Gruen, DM, Temple, D, Chang, RPH, English, S & Nemanich, RJ 1997, Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. in Materials Research Society Symposium - Proceedings. vol. 498, MRS, pp. 227-232, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 12/1/97.

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title = "Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors",

abstract = "In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.",

author = "McCauley, {T. G.} and Corrigan, {T. D.} and Krauss, {A. R.} and O. Auciello and D. Zhou and Gruen, {D. M.} and D. Temple and Chang, {Robert P. H.} and S. English and Nemanich, {R. J.}",

year = "1997",

language = "English",

volume = "498",

pages = "227--232",

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T1 - Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors

AU - McCauley, T. G.

AU - Corrigan, T. D.

AU - Krauss, A. R.

AU - Auciello, O.

AU - Zhou, D.

AU - Gruen, D. M.

AU - Temple, D.

AU - Chang, Robert P. H.

AU - English, S.

AU - Nemanich, R. J.

PY - 1997

Y1 - 1997

N2 - In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

AB - In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

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M3 - Conference contribution

AN - SCOPUS:0031348955

VL - 498

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EP - 232

BT - Materials Research Society Symposium - Proceedings

PB - MRS

T2 - Proceedings of the 1997 MRS Fall Symposium

Y2 - 1 December 1997 through 4 December 1997

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