Electron injection-induced effects in Si-doped β-Ga 2 O 3

Sushrut Modak, Jonathan Lee, Leonid Chernyak, Jiancheng Yang, Fan Ren, Stephen J. Pearton, Sergey Khodorov, Igor Lubomirsky

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The impact of electron injection, using 10 keV beam of a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga 2 O 3 was studied for temperatures ranging from room to 120°C. In-situ Electron Beam-Induced Current technique was employed to determine the diffusion length of minority holes as a function of temperature and duration of electron injection. The experiments revealed a pronounced elongation of hole diffusion length with increasing duration of injection. The activation energy, associated with the electron injection-induced elongation of the diffusion length, was determined at ∼ 74 meV and matches the previous independent studies. It was additionally discovered that an increase of the diffusion length in the regions affected by electron injection is accompanied by a simultaneous decrease of cathodoluminescence intensity. Both effects were attributed to increasing non-equilibrium hole lifetime in the valence band of β-Ga 2 O 3 semiconductor.

Original languageEnglish
Article number015127
JournalAIP Advances
Issue number1
Publication statusPublished - Jan 1 2019


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Modak, S., Lee, J., Chernyak, L., Yang, J., Ren, F., Pearton, S. J., Khodorov, S., & Lubomirsky, I. (2019). Electron injection-induced effects in Si-doped β-Ga 2 O 3 AIP Advances, 9(1), [015127]. https://doi.org/10.1063/1.5079730