Electron injection-induced effects in Si-doped β-Ga2O3

Sushrut Modak, Jonathan Lee, Leonid Chernyak, Jiancheng Yang, Fan Ren, Stephen J. Pearton, Sergey Khodorov, Igor Lubomirsky

Research output: Contribution to journalArticle

Abstract

The impact of electron injection, using 10 keV beam of a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga2O3 was studied for temperatures ranging from room to 120°C. In-situ Electron Beam-Induced Current technique was employed to determine the diffusion length of minority holes as a function of temperature and duration of electron injection. The experiments revealed a pronounced elongation of hole diffusion length with increasing duration of injection. The activation energy, associated with the electron injection-induced elongation of the diffusion length, was determined at ∼ 74 meV and matches the previous independent studies. It was additionally discovered that an increase of the diffusion length in the regions affected by electron injection is accompanied by a simultaneous decrease of cathodoluminescence intensity. Both effects were attributed to increasing non-equilibrium hole lifetime in the valence band of β-Ga2O3 semiconductor.

Original languageEnglish
Article number015127
JournalAIP Advances
Volume9
Issue number1
DOIs
Publication statusPublished - Jan 1 2019

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diffusion length
injection
electrons
elongation
minorities
minority carriers
cathodoluminescence
rooms
electron microscopes
electron beams
activation energy
valence
life (durability)
scanning
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Modak, S., Lee, J., Chernyak, L., Yang, J., Ren, F., Pearton, S. J., ... Lubomirsky, I. (2019). Electron injection-induced effects in Si-doped β-Ga2O3 AIP Advances, 9(1), [015127]. https://doi.org/10.1063/1.5079730

Electron injection-induced effects in Si-doped β-Ga2O3 . / Modak, Sushrut; Lee, Jonathan; Chernyak, Leonid; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.; Khodorov, Sergey; Lubomirsky, Igor.

In: AIP Advances, Vol. 9, No. 1, 015127, 01.01.2019.

Research output: Contribution to journalArticle

Modak, S, Lee, J, Chernyak, L, Yang, J, Ren, F, Pearton, SJ, Khodorov, S & Lubomirsky, I 2019, 'Electron injection-induced effects in Si-doped β-Ga2O3 ', AIP Advances, vol. 9, no. 1, 015127. https://doi.org/10.1063/1.5079730
Modak S, Lee J, Chernyak L, Yang J, Ren F, Pearton SJ et al. Electron injection-induced effects in Si-doped β-Ga2O3 AIP Advances. 2019 Jan 1;9(1). 015127. https://doi.org/10.1063/1.5079730
Modak, Sushrut ; Lee, Jonathan ; Chernyak, Leonid ; Yang, Jiancheng ; Ren, Fan ; Pearton, Stephen J. ; Khodorov, Sergey ; Lubomirsky, Igor. / Electron injection-induced effects in Si-doped β-Ga2O3 In: AIP Advances. 2019 ; Vol. 9, No. 1.
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