Abstract
The fabrication of an ordered dopant distribution within a semiconductor provides an exciting challenge to thin-film growth. In this paper the structure of an ordered boron layer embedded in silicon is analyzed by electron microscopy. Planar-transmission electron diffraction confirms preservation of the 2 × 1 ordered boron layer beneath the crystalline Si cap. High-resolution transmission electron microscopy in cross-section clearly identifies the BSi layer and shows that the width of this layer in the growth direction is ≤ 5 monolayers (ML). This confirms earlier X-ray diffraction and Auger electron spectroscopy results which determined the boron spreading to be ∼ 3 ML. Secondary ion mass spectroscopy results, showing a resolution-limited impurity profile, are also included. Plan-view imaging is used to identify defects in the structure. These results provide further insight into this unique dopant structure which yields the narrowest electrically active dopant profile reported.
| Original language | English |
|---|---|
| Pages (from-to) | 413-418 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 84 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1995 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Physical and Theoretical Chemistry
- Condensed Matter Physics
Cite this
Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon. / Weir, B. E.; Eaglesham, D. J.; Feldman, Leonard C; Luftman, H. S.; Headrick, R. L.
In: Applied Surface Science, Vol. 84, No. 4, 1995, p. 413-418.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon
AU - Weir, B. E.
AU - Eaglesham, D. J.
AU - Feldman, Leonard C
AU - Luftman, H. S.
AU - Headrick, R. L.
PY - 1995
Y1 - 1995
N2 - The fabrication of an ordered dopant distribution within a semiconductor provides an exciting challenge to thin-film growth. In this paper the structure of an ordered boron layer embedded in silicon is analyzed by electron microscopy. Planar-transmission electron diffraction confirms preservation of the 2 × 1 ordered boron layer beneath the crystalline Si cap. High-resolution transmission electron microscopy in cross-section clearly identifies the BSi layer and shows that the width of this layer in the growth direction is ≤ 5 monolayers (ML). This confirms earlier X-ray diffraction and Auger electron spectroscopy results which determined the boron spreading to be ∼ 3 ML. Secondary ion mass spectroscopy results, showing a resolution-limited impurity profile, are also included. Plan-view imaging is used to identify defects in the structure. These results provide further insight into this unique dopant structure which yields the narrowest electrically active dopant profile reported.
AB - The fabrication of an ordered dopant distribution within a semiconductor provides an exciting challenge to thin-film growth. In this paper the structure of an ordered boron layer embedded in silicon is analyzed by electron microscopy. Planar-transmission electron diffraction confirms preservation of the 2 × 1 ordered boron layer beneath the crystalline Si cap. High-resolution transmission electron microscopy in cross-section clearly identifies the BSi layer and shows that the width of this layer in the growth direction is ≤ 5 monolayers (ML). This confirms earlier X-ray diffraction and Auger electron spectroscopy results which determined the boron spreading to be ∼ 3 ML. Secondary ion mass spectroscopy results, showing a resolution-limited impurity profile, are also included. Plan-view imaging is used to identify defects in the structure. These results provide further insight into this unique dopant structure which yields the narrowest electrically active dopant profile reported.
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U2 - 10.1016/0169-4332(95)00015-1
DO - 10.1016/0169-4332(95)00015-1
M3 - Article
VL - 84
SP - 413
EP - 418
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 4
ER -