Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

B. E. Weir, D. J. Eaglesham, L. C. Feldman, H. S. Luftman, R. L. Headrick

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The fabrication of an ordered dopant distribution within a semiconductor provides an exciting challenge to thin-film growth. In this paper the structure of an ordered boron layer embedded in silicon is analyzed by electron microscopy. Planar-transmission electron diffraction confirms preservation of the 2 × 1 ordered boron layer beneath the crystalline Si cap. High-resolution transmission electron microscopy in cross-section clearly identifies the BSi layer and shows that the width of this layer in the growth direction is ≤ 5 monolayers (ML). This confirms earlier X-ray diffraction and Auger electron spectroscopy results which determined the boron spreading to be ∼ 3 ML. Secondary ion mass spectroscopy results, showing a resolution-limited impurity profile, are also included. Plan-view imaging is used to identify defects in the structure. These results provide further insight into this unique dopant structure which yields the narrowest electrically active dopant profile reported.

Original languageEnglish
Pages (from-to)413-418
Number of pages6
JournalApplied Surface Science
Volume84
Issue number4
DOIs
Publication statusPublished - Apr 1995

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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