Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates

J. Y. Dai, F. H. Kaatz, P. R. Markworth, D. B. Buchholz, X. Liu, W. A. Chiou, Robert P. H. Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

Original languageEnglish
Pages (from-to)1485-1491
Number of pages7
JournalJournal of Materials Research
Volume13
Issue number6
Publication statusPublished - Jun 1998

Fingerprint

yttria-stabilized zirconia
Electron microscopy
electron microscopy
High resolution electron microscopy
Surface chemistry
Substrates
Transmission electron microscopy
Reaction products
Chemical vapor deposition
Grain boundaries
Oxygen
Scanning electron microscopy
barium copper yttrium oxide
transmission electron microscopy
high resolution
atomic structure
reaction products
grain boundaries
vapor deposition
scanning electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Dai, J. Y., Kaatz, F. H., Markworth, P. R., Buchholz, D. B., Liu, X., Chiou, W. A., & Chang, R. P. H. (1998). Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates. Journal of Materials Research, 13(6), 1485-1491.

Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates. / Dai, J. Y.; Kaatz, F. H.; Markworth, P. R.; Buchholz, D. B.; Liu, X.; Chiou, W. A.; Chang, Robert P. H.

In: Journal of Materials Research, Vol. 13, No. 6, 06.1998, p. 1485-1491.

Research output: Contribution to journalArticle

Dai, JY, Kaatz, FH, Markworth, PR, Buchholz, DB, Liu, X, Chiou, WA & Chang, RPH 1998, 'Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates', Journal of Materials Research, vol. 13, no. 6, pp. 1485-1491.
Dai JY, Kaatz FH, Markworth PR, Buchholz DB, Liu X, Chiou WA et al. Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates. Journal of Materials Research. 1998 Jun;13(6):1485-1491.
Dai, J. Y. ; Kaatz, F. H. ; Markworth, P. R. ; Buchholz, D. B. ; Liu, X. ; Chiou, W. A. ; Chang, Robert P. H. / Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates. In: Journal of Materials Research. 1998 ; Vol. 13, No. 6. pp. 1485-1491.
@article{6678d62c31fc436f8f5b74b5120a67cc,
title = "Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates",
abstract = "The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.",
author = "Dai, {J. Y.} and Kaatz, {F. H.} and Markworth, {P. R.} and Buchholz, {D. B.} and X. Liu and Chiou, {W. A.} and Chang, {Robert P. H.}",
year = "1998",
month = "6",
language = "English",
volume = "13",
pages = "1485--1491",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "6",

}

TY - JOUR

T1 - Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates

AU - Dai, J. Y.

AU - Kaatz, F. H.

AU - Markworth, P. R.

AU - Buchholz, D. B.

AU - Liu, X.

AU - Chiou, W. A.

AU - Chang, Robert P. H.

PY - 1998/6

Y1 - 1998/6

N2 - The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

AB - The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

UR - http://www.scopus.com/inward/record.url?scp=0032097722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032097722&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032097722

VL - 13

SP - 1485

EP - 1491

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 6

ER -