TY - GEN
T1 - Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks
AU - Rangan, S.
AU - Bersch, E.
AU - Bartynski, R. A.
AU - Garfunkel, E.
AU - Vescovo, E.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.
AB - Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.
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U2 - 10.1149/1.3481614
DO - 10.1149/1.3481614
M3 - Conference contribution
AN - SCOPUS:79952663240
SN - 9781566778220
T3 - ECS Transactions
SP - 267
EP - 279
BT - Physics and Technology of High-k Materials 8
T2 - 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
Y2 - 11 October 2010 through 15 October 2010
ER -