Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks

S. Rangan, E. Bersch, R. A. Bartynski, E. Garfunkel, E. Vescovo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages267-279
Number of pages13
Edition3
DOIs
Publication statusPublished - Dec 1 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Rangan, S., Bersch, E., Bartynski, R. A., Garfunkel, E., & Vescovo, E. (2010). Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. In Physics and Technology of High-k Materials 8 (3 ed., pp. 267-279). (ECS Transactions; Vol. 33, No. 3). https://doi.org/10.1149/1.3481614