Abstract
Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 267-279 |
| Number of pages | 13 |
| Volume | 33 |
| Edition | 3 |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 11 2010 → Oct 15 2010 |
Other
| Other | 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting |
|---|---|
| Country | United States |
| City | Las Vegas, NV |
| Period | 10/11/10 → 10/15/10 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. / Rangan, S.; Bersch, E.; Bartynski, R. A.; Garfunkel, Eric; Vescovo, E.
ECS Transactions. Vol. 33 3. ed. 2010. p. 267-279.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks
AU - Rangan, S.
AU - Bersch, E.
AU - Bartynski, R. A.
AU - Garfunkel, Eric
AU - Vescovo, E.
PY - 2010
Y1 - 2010
N2 - Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.
AB - Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.
UR - http://www.scopus.com/inward/record.url?scp=79952663240&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952663240&partnerID=8YFLogxK
U2 - 10.1149/1.3481614
DO - 10.1149/1.3481614
M3 - Conference contribution
AN - SCOPUS:79952663240
SN - 9781566778220
VL - 33
SP - 267
EP - 279
BT - ECS Transactions
ER -