Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks

S. Rangan; E. Bersch; R. A. Bartynski; E. Garfunkel; E. Vescovo

doi:10.1149/1.3481614

Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks

S. Rangan, E. Bersch, R. A. Bartynski, E. Garfunkel, E. Vescovo

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Valence and conduction band edges of ultra-thin oxides (SiO₂, HfO₂, Hf_0.7Si_0.3O₂ and Al ₂O₃ grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

Original language	English
Title of host publication	Physics and Technology of High-k Materials 8
Pages	267-279
Number of pages	13
Edition	3
DOIs	https://doi.org/10.1149/1.3481614
Publication status	Published - Dec 1 2010
Event	8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 11 2010 → Oct 15 2010

Publication series

Name	ECS Transactions
Number	3
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
Country	United States
City	Las Vegas, NV
Period	10/11/10 → 10/15/10

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3481614

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Rangan, S, Bersch, E, Bartynski, RA, Garfunkel, E & Vescovo, E 2010, Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. in Physics and Technology of High-k Materials 8. 3 edn, ECS Transactions, no. 3, vol. 33, pp. 267-279, 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting, Las Vegas, NV, United States, 10/11/10. https://doi.org/10.1149/1.3481614

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abstract = "Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.",

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AU - Rangan, S.

AU - Bersch, E.

AU - Bartynski, R. A.

AU - Garfunkel, E.

AU - Vescovo, E.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

AB - Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

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