Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks

S. Rangan, E. Bersch, R. A. Bartynski, Eric Garfunkel, E. Vescovo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Valence and conduction band edges of ultra-thin oxides (SiO2, HfO2, Hf0.7Si0.3O2 and Al 2O3 grown on silicon) and their shifts upon sequential metallization with three metals (Ru, Ti and Al) have been measured using synchrotron radiation-excited x-ray photoemission, ultra-violet photoemission and inverse photoemission. From these techniques, the offsets between the valence and conduction band edges of the oxides and the metal gate Fermi edge have been directly measured. Upon metallization, consistent shifts of the oxides band edges and core levels are measured, due to the creation of interface dipoles at the metal/oxide interfaces. Using the energy gap, the electron affinity of the oxides and the metal work functions that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

Original languageEnglish
Title of host publicationECS Transactions
Pages267-279
Number of pages13
Volume33
Edition3
DOIs
Publication statusPublished - 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

Fingerprint

Photoemission
Oxides
Electrons
Metals
Valence bands
Metallizing
Conduction bands
Electron affinity
Core levels
Synchrotron radiation
Energy gap
Oxide semiconductors
X rays
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Rangan, S., Bersch, E., Bartynski, R. A., Garfunkel, E., & Vescovo, E. (2010). Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. In ECS Transactions (3 ed., Vol. 33, pp. 267-279) https://doi.org/10.1149/1.3481614

Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. / Rangan, S.; Bersch, E.; Bartynski, R. A.; Garfunkel, Eric; Vescovo, E.

ECS Transactions. Vol. 33 3. ed. 2010. p. 267-279.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rangan, S, Bersch, E, Bartynski, RA, Garfunkel, E & Vescovo, E 2010, Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. in ECS Transactions. 3 edn, vol. 33, pp. 267-279, 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting, Las Vegas, NV, United States, 10/11/10. https://doi.org/10.1149/1.3481614
Rangan S, Bersch E, Bartynski RA, Garfunkel E, Vescovo E. Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. In ECS Transactions. 3 ed. Vol. 33. 2010. p. 267-279 https://doi.org/10.1149/1.3481614
Rangan, S. ; Bersch, E. ; Bartynski, R. A. ; Garfunkel, Eric ; Vescovo, E. / Electron spectroscopic measurements of band alignment in metal/oxide/semiconductor stacks. ECS Transactions. Vol. 33 3. ed. 2010. pp. 267-279
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