Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities

Antonio Facchetti, Myung Han Yoon, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of "plastic electronics". We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion: Ioff ratios approaching 1 cm2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsN. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang
Pages331-336
Number of pages6
Volume814
Publication statusPublished - 2004
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Other

OtherFlexible Electronics 2004 - Materials and Device Technology
CountryUnited States
CitySan Francisco, CA
Period4/13/044/16/04

Fingerprint

Thiophenes
Semiconducting organic compounds
Carrier mobility
Thiophene
Thin film transistors
Field effect transistors
Electronic equipment
Solubility
Vacuum
Ions
Semiconductor materials
Plastics
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Facchetti, A., Yoon, M. H., & Marks, T. J. (2004). Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities. In N. Fruehauf, B. R. Chalamala, B. E. Gnade, & J. Jang (Eds.), Materials Research Society Symposium Proceedings (Vol. 814, pp. 331-336)

Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities. / Facchetti, Antonio; Yoon, Myung Han; Marks, Tobin J.

Materials Research Society Symposium Proceedings. ed. / N. Fruehauf; B.R. Chalamala; B.E. Gnade; J. Jang. Vol. 814 2004. p. 331-336.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Facchetti, A, Yoon, MH & Marks, TJ 2004, Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities. in N Fruehauf, BR Chalamala, BE Gnade & J Jang (eds), Materials Research Society Symposium Proceedings. vol. 814, pp. 331-336, Flexible Electronics 2004 - Materials and Device Technology, San Francisco, CA, United States, 4/13/04.
Facchetti A, Yoon MH, Marks TJ. Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities. In Fruehauf N, Chalamala BR, Gnade BE, Jang J, editors, Materials Research Society Symposium Proceedings. Vol. 814. 2004. p. 331-336
Facchetti, Antonio ; Yoon, Myung Han ; Marks, Tobin J. / Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities. Materials Research Society Symposium Proceedings. editor / N. Fruehauf ; B.R. Chalamala ; B.E. Gnade ; J. Jang. Vol. 814 2004. pp. 331-336
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