Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities

Antonio Facchetti, Myung Han Yoon, Tobin J. Marks

Research output: Contribution to journalConference article

Abstract

Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of "plastic electronics". We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion: Ioff ratios approaching 1 cm2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.

Original languageEnglish
Pages (from-to)331-336
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume814
Publication statusPublished - Dec 1 2004
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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