Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, Leonard C Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - 2009
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: Dec 9 2009Dec 11 2009

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period12/9/0912/11/09

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MOS capacitors
Interface states
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2009). Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378028] https://doi.org/10.1109/ISDRS.2009.5378028

Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, Leonard C; Mooney, P. M.

2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378028.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basile, AF, Rozen, J, Chen, XD, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2009, Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378028, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378028
Basile AF, Rozen J, Chen XD, Dhar S, Williams JR, Feldman LC et al. Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors. In 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378028 https://doi.org/10.1109/ISDRS.2009.5378028
Basile, A. F. ; Rozen, J. ; Chen, X. D. ; Dhar, S. ; Williams, J. R. ; Feldman, Leonard C ; Mooney, P. M. / Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors. 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009.
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