Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - Dec 1 2009
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: Dec 9 2009Dec 11 2009

Publication series

Name2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period12/9/0912/11/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2009). Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378028] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378028