Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors

A. F. Basile; J. Rozen; X. D. Chen; S. Dhar; J. R. Williams; L. C. Feldman; P. M. Mooney

doi:10.1109/ISDRS.2009.5378028

Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378028
Publication status	Published - Dec 1 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378028

Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2009). Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378028] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378028

Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, L. C.; Mooney, P. M.

2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378028 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basile, AF, Rozen, J, Chen, XD, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2009, Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378028, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378028

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