@inproceedings{bdbf1cbd0915491abe28478a3f0e216c,
title = "Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors",
author = "Basile, {A. F.} and J. Rozen and Chen, {X. D.} and S. Dhar and Williams, {J. R.} and Feldman, {L. C.} and Mooney, {P. M.}",
year = "2009",
month = dec,
day = "1",
doi = "10.1109/ISDRS.2009.5378028",
language = "English",
isbn = "9781424460304",
series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",
booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",
note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",
}