Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - Dec 1 2009
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: Dec 9 2009Dec 11 2009

Publication series

Name2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period12/9/0912/11/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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