Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors

A. F. Basile; J. Rozen; X. D. Chen; S. Dhar; J. R. Williams; L. C. Feldman; P. M. Mooney

doi:10.1109/ISDRS.2009.5378028

Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378028
Publication status	Published - Dec 1 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2009). Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378028] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378028

Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, L. C.; Mooney, P. M.

2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378028 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basile, AF, Rozen, J, Chen, XD, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2009, Electron trapping at interface states in SiO₂/4H-SiC and SiO₂/6H-SiC MOS capacitors. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378028, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378028

@inproceedings{bdbf1cbd0915491abe28478a3f0e216c,

title = "Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors",

author = "Basile, {A. F.} and J. Rozen and Chen, {X. D.} and S. Dhar and Williams, {J. R.} and Feldman, {L. C.} and Mooney, {P. M.}",

year = "2009",

month = dec

day = "1",

doi = "10.1109/ISDRS.2009.5378028",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

TY - GEN

T1 - Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors

AU - Basile, A. F.

AU - Rozen, J.

AU - Chen, X. D.

AU - Dhar, S.

AU - Williams, J. R.

AU - Feldman, L. C.

AU - Mooney, P. M.

PY - 2009/12/1

Y1 - 2009/12/1

UR - http://www.scopus.com/inward/record.url?scp=77949353241&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949353241&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378028

DO - 10.1109/ISDRS.2009.5378028

M3 - Conference contribution

AN - SCOPUS:77949353241

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Access to Document

10.1109/ISDRS.2009.5378028