Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation

A. F. Basile, A. C. Ahyi, L. C. Feldman, J. R. Williams, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The electrical properties of the SiO2/SiC interface fabricated by sodium-enhanced oxidation (SEO) of n-type 4H-SiC were studied by temperature-dependent C-V and constant-capacitance deep level transient spectroscopy (CCDLTS). With the exception of near-interface traps in the SiC epi-layer, which are not present in the SEO samples, the trap species observed in SEO capacitors are the same as those observed in both standard-oxidized and NO-annealed MOS capacitors. Total electron trapping in accumulation is comparable in SEO and NO-annealed capacitors; however, the traps in SEO capacitors are located at the interface whereas tunneling into oxide traps is observed in NO-annealed samples. A series of bias-temperature stress tests show that electron trapping is essentially unchanged when mobile sodium ions are moved toward the interface. The improved mobility attained by this process compared to NO annealing may be due to the absence of near-interface SiC traps in SEO samples.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages757-760
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - Jan 1 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Keywords

  • Deep levels
  • Interface states
  • Mobile ions
  • Sodium enhanced oxidation
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Basile, A. F., Ahyi, A. C., Feldman, L. C., Williams, J. R., & Mooney, P. M. (2012). Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 757-760). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.757