Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation

A. F. Basile, A. C. Ahyi, Leonard C Feldman, J. R. Williams, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The electrical properties of the SiO 2/SiC interface fabricated by sodium-enhanced oxidation (SEO) of n-type 4H-SiC were studied by temperature-dependent C-V and constant-capacitance deep level transient spectroscopy (CCDLTS). With the exception of near-interface traps in the SiC epi-layer, which are not present in the SEO samples, the trap species observed in SEO capacitors are the same as those observed in both standard-oxidized and NO-annealed MOS capacitors. Total electron trapping in accumulation is comparable in SEO and NO-annealed capacitors; however, the traps in SEO capacitors are located at the interface whereas tunneling into oxide traps is observed in NO-annealed samples. A series of bias-temperature stress tests show that electron trapping is essentially unchanged when mobile sodium ions are moved toward the interface. The improved mobility attained by this process compared to NO annealing may be due to the absence of near-interface SiC traps in SEO samples.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages757-760
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

MOS capacitors
capacitors
Sodium
trapping
sodium
Oxidation
oxidation
Electrons
traps
electrons
Capacitors
Deep level transient spectroscopy
Oxides
Electric properties
Capacitance
capacitance
electrical properties
Annealing
Ions
Temperature

Keywords

  • Deep levels
  • Interface states
  • Mobile ions
  • Sodium enhanced oxidation
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Basile, A. F., Ahyi, A. C., Feldman, L. C., Williams, J. R., & Mooney, P. M. (2012). Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation. In Materials Science Forum (Vol. 717-720, pp. 757-760). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.757

Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation. / Basile, A. F.; Ahyi, A. C.; Feldman, Leonard C; Williams, J. R.; Mooney, P. M.

Materials Science Forum. Vol. 717-720 2012. p. 757-760 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basile, AF, Ahyi, AC, Feldman, LC, Williams, JR & Mooney, PM 2012, Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 757-760, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.757
Basile AF, Ahyi AC, Feldman LC, Williams JR, Mooney PM. Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation. In Materials Science Forum. Vol. 717-720. 2012. p. 757-760. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.757
Basile, A. F. ; Ahyi, A. C. ; Feldman, Leonard C ; Williams, J. R. ; Mooney, P. M. / Electron trapping in 4H-SiC MOS capacitors fabricated by sodium-enhanced oxidation. Materials Science Forum. Vol. 717-720 2012. pp. 757-760 (Materials Science Forum).
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