Electron trapping in ultrathin SiO2 on Si(001) probed by electric-field-induced second-harmonic generation

G. Lupke, W. Wang, N. H. Tolk, L. C. Feldman, I. C. Kiziyalli

Research output: Contribution to conferencePaperpeer-review

Abstract

The charge trapping at near-interface oxide defects was observed using an electric-field-induced second-harmonic generation (EFISHG). The reflected second-harmonic generation signal was altered due to a change of the band-bending in the silicon space-charge region (SCR) at the interface. At λ = 800 nm the EFISHG response was resonantly enhanced by two-photon transitions in the silicon space-charge region near the Si/SiO2 interface. Some of the excited electrons were trapped at oxide defects yielding a gradual increase of the SH intensity. The trapped charges can be released from the defect sites either through thermal activation or due to direct electronic excitation by the laser beam.

Original languageEnglish
Pages89-91
Number of pages3
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 IEEE Nonlinear Optics Topical Meeting - Princeville, HI, USA
Duration: Aug 10 1998Aug 14 1998

Other

OtherProceedings of the 1998 IEEE Nonlinear Optics Topical Meeting
CityPrinceville, HI, USA
Period8/10/988/14/98

ASJC Scopus subject areas

  • Engineering(all)

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