Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition

Brian Kiraly, Robert M. Jacobberger, Andrew J. Mannix, Gavin P. Campbell, Michael J. Bedzyk, Michael S. Arnold, Mark C Hersam, Nathan P. Guisinger

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this work, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene-Ge interface.

Original languageEnglish
Pages (from-to)7414-7420
Number of pages7
JournalNano Letters
Volume15
Issue number11
DOIs
Publication statusPublished - Nov 11 2015

Fingerprint

Germanium
Graphite
Electronic properties
Graphene
Chemical vapor deposition
germanium
graphene
vapor deposition
mechanical properties
Mechanical properties
electronics
atomic structure
Spectroscopy
Reconstruction (structural)
Scanning
scanning
Surface reconstruction
Ultrahigh vacuum
Scanning tunneling microscopy
Substrates

Keywords

  • chemical vapor deposition
  • Epitaxy
  • Raman spectroscopy
  • scanning tunneling microscopy
  • scanning tunneling spectroscopy
  • surface reconstruction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Kiraly, B., Jacobberger, R. M., Mannix, A. J., Campbell, G. P., Bedzyk, M. J., Arnold, M. S., ... Guisinger, N. P. (2015). Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition. Nano Letters, 15(11), 7414-7420. https://doi.org/10.1021/acs.nanolett.5b02833

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition. / Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Campbell, Gavin P.; Bedzyk, Michael J.; Arnold, Michael S.; Hersam, Mark C; Guisinger, Nathan P.

In: Nano Letters, Vol. 15, No. 11, 11.11.2015, p. 7414-7420.

Research output: Contribution to journalArticle

Kiraly, B, Jacobberger, RM, Mannix, AJ, Campbell, GP, Bedzyk, MJ, Arnold, MS, Hersam, MC & Guisinger, NP 2015, 'Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition', Nano Letters, vol. 15, no. 11, pp. 7414-7420. https://doi.org/10.1021/acs.nanolett.5b02833
Kiraly B, Jacobberger RM, Mannix AJ, Campbell GP, Bedzyk MJ, Arnold MS et al. Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition. Nano Letters. 2015 Nov 11;15(11):7414-7420. https://doi.org/10.1021/acs.nanolett.5b02833
Kiraly, Brian ; Jacobberger, Robert M. ; Mannix, Andrew J. ; Campbell, Gavin P. ; Bedzyk, Michael J. ; Arnold, Michael S. ; Hersam, Mark C ; Guisinger, Nathan P. / Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition. In: Nano Letters. 2015 ; Vol. 15, No. 11. pp. 7414-7420.
@article{8448c24944e041e4941931e2682b1499,
title = "Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition",
abstract = "Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90{\%} of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this work, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene-Ge interface.",
keywords = "chemical vapor deposition, Epitaxy, Raman spectroscopy, scanning tunneling microscopy, scanning tunneling spectroscopy, surface reconstruction",
author = "Brian Kiraly and Jacobberger, {Robert M.} and Mannix, {Andrew J.} and Campbell, {Gavin P.} and Bedzyk, {Michael J.} and Arnold, {Michael S.} and Hersam, {Mark C} and Guisinger, {Nathan P.}",
year = "2015",
month = "11",
day = "11",
doi = "10.1021/acs.nanolett.5b02833",
language = "English",
volume = "15",
pages = "7414--7420",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition

AU - Kiraly, Brian

AU - Jacobberger, Robert M.

AU - Mannix, Andrew J.

AU - Campbell, Gavin P.

AU - Bedzyk, Michael J.

AU - Arnold, Michael S.

AU - Hersam, Mark C

AU - Guisinger, Nathan P.

PY - 2015/11/11

Y1 - 2015/11/11

N2 - Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this work, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene-Ge interface.

AB - Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this work, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene-Ge interface.

KW - chemical vapor deposition

KW - Epitaxy

KW - Raman spectroscopy

KW - scanning tunneling microscopy

KW - scanning tunneling spectroscopy

KW - surface reconstruction

UR - http://www.scopus.com/inward/record.url?scp=84946918096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946918096&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b02833

DO - 10.1021/acs.nanolett.5b02833

M3 - Article

VL - 15

SP - 7414

EP - 7420

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 11

ER -