Electronic and optical properties of Ga3-xIn 5+xSn2O16

An experimental and theoretical study

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Experimental measurements of optical and electronic properties and local-density approximation (LDA) calculations on polycrystalline Ga 3-xIn5+xSn2O16 - the so-called "T-phase" in the Ga2O3-In2O 3-SnO2 ternary system - have revealed it to be a good candidate for n-type transparent conducting oxide applications, particularly in the replacement of tin-doped indium oxide as a transparent electrode in organic photovoltaics. Room temperature conductivity of over 1000 S cm-1 was measured in polycrystalline bulk samples. Band structure calculations reveal a highly dispersed conduction band, corresponding to an electron effective mass of about 0.2 me. Normalized carrier mobility and concentration trends indicate that conductivity changes in T-phase are attributable to changes in carrier concentration, with mobility remaining relatively constant through the range of processing conditions and sample composition. Screened exchange LDA calculations yield a fundamental band gap of about 2.60 eV. A relatively constant optical band gap in the range of 2.9-3.0 eV along the range of T-phase composition was measured by diffuse reflectance of bulk samples, whereas ab-initio simulations predict a decreasing fundamental band gap with increasing In-to-Ga ratio. This is attributed to an increasing Burstein-Moss shift - corresponding to increasing free electron concentration - with increasing In-to-Ga ratio.

Original languageEnglish
Article number013703
JournalJournal of Applied Physics
Volume115
Issue number1
DOIs
Publication statusPublished - Jan 7 2014

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optical properties
electronics
Bryophytes
conductivity
ternary systems
carrier mobility
approximation
indium oxides
free electrons
tin
conduction bands
reflectance
trends
conduction
electrodes
oxides
shift
room temperature
electrons
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic and optical properties of Ga3-xIn 5+xSn2O16 : An experimental and theoretical study. / Dolgonos, Alex; Lam, Kanber; Poeppelmeier, Kenneth R; Freeman, Arthur J; Mason, Thomas O.

In: Journal of Applied Physics, Vol. 115, No. 1, 013703, 07.01.2014.

Research output: Contribution to journalArticle

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