Electronic behaviour and field emission of a-C

H:N/Si heterojunctions

D. A I Munindradasa, Manish Chhowalla, G. A J Amaratunga, S. R P Silva

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electronic properties of nitrogen doped hydrogenated amorphous carbon films deposited in an inductively coupled plasma enhanced chemical vapour deposition process by decomposition of methane (CH4) and nitrogen (N2) are reported. In particular, the relation of these properties to the overall field emission performance of an a-C:H:N/Si heterojunction is considered. The heterojunctions have forward to backward rectifying current ratios of 3-4 orders of magnitude. The capacitance as a function of voltage (C-V) characteristics show negligible hysteresis, zero flat band voltage and response up to 13 MHz without loss of the typical depletion transition. The current as a function of voltage (I-V) of the metal (Au)/a-C:H:N/Si are consistent with Fowler-Nordheim type tunnelling of carriers from Si into a-C:H:N. The transition barrier is found to be ∼ 0.07 eV. Which is very close to the previously reported electron emission barrier into vacuum from a-C:H:N. Correlation between the electron emission properties of a-C:H:N/Si heterojunctions and the electronic properties are presented.

Original languageEnglish
Pages (from-to)1106-1112
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
Publication statusPublished - May 1998

Fingerprint

Field emission
Heterojunctions
heterojunctions
field emission
Electron emission
Electronic properties
Electric potential
Nitrogen
electronics
electron emission
electric potential
Carbon films
Amorphous carbon
Methane
Inductively coupled plasma
Amorphous films
Plasma enhanced chemical vapor deposition
nitrogen
Hysteresis
Capacitance

Keywords

  • Electronic behaviour
  • Field emission
  • Heterojunctions

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Munindradasa, D. A. I., Chhowalla, M., Amaratunga, G. A. J., & Silva, S. R. P. (1998). Electronic behaviour and field emission of a-C: H:N/Si heterojunctions. Journal of Non-Crystalline Solids, 227-230(PART 2), 1106-1112.

Electronic behaviour and field emission of a-C : H:N/Si heterojunctions. / Munindradasa, D. A I; Chhowalla, Manish; Amaratunga, G. A J; Silva, S. R P.

In: Journal of Non-Crystalline Solids, Vol. 227-230, No. PART 2, 05.1998, p. 1106-1112.

Research output: Contribution to journalArticle

Munindradasa, DAI, Chhowalla, M, Amaratunga, GAJ & Silva, SRP 1998, 'Electronic behaviour and field emission of a-C: H:N/Si heterojunctions', Journal of Non-Crystalline Solids, vol. 227-230, no. PART 2, pp. 1106-1112.
Munindradasa DAI, Chhowalla M, Amaratunga GAJ, Silva SRP. Electronic behaviour and field emission of a-C: H:N/Si heterojunctions. Journal of Non-Crystalline Solids. 1998 May;227-230(PART 2):1106-1112.
Munindradasa, D. A I ; Chhowalla, Manish ; Amaratunga, G. A J ; Silva, S. R P. / Electronic behaviour and field emission of a-C : H:N/Si heterojunctions. In: Journal of Non-Crystalline Solids. 1998 ; Vol. 227-230, No. PART 2. pp. 1106-1112.
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