Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

D. A.I. Munindradasa, M. Chhowalla, G. A.J. Amaratunga, S. R.P. Silva

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electronic properties of nitrogen doped hydrogenated amorphous carbon films deposited in an inductively coupled plasma enhanced chemical vapour deposition process by decomposition of methane (CH4) and nitrogen (N2) are reported. In particular, the relation of these properties to the overall field emission performance of an a-C:H:N/Si heterojunction is considered. The heterojunctions have forward to backward rectifying current ratios of 3-4 orders of magnitude. The capacitance as a function of voltage (C-V) characteristics show negligible hysteresis, zero flat band voltage and response up to 13 MHz without loss of the typical depletion transition. The current as a function of voltage (I-V) of the metal (Au)/a-C:H:N/Si are consistent with Fowler-Nordheim type tunnelling of carriers from Si into a-C:H:N. The transition barrier is found to be ∼ 0.07 eV. Which is very close to the previously reported electron emission barrier into vacuum from a-C:H:N. Correlation between the electron emission properties of a-C:H:N/Si heterojunctions and the electronic properties are presented.

Original languageEnglish
Pages (from-to)1106-1112
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
DOIs
Publication statusPublished - May 1998

    Fingerprint

Keywords

  • Electronic behaviour
  • Field emission
  • Heterojunctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this