Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2

Joon Il Kim, John A. Peters, Yihui He, Zhifu Liu, Sanjib Das, Oleg Y. Kontsevoi, Mercouri G Kanatzidis, Bruce W. Wessels

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg3Se2I2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as first-principles density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 1013-1015cm-3 and capture cross sections of ∼10-16cm2. A distinct persistent photoconductivity is observed at both low temperatures (<170K) and high temperatures (>230 K), with major implications for room-temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (VHg, VSe, and VI) and interstitials (Seint) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.

Original languageEnglish
Article number165201
JournalPhysical Review B
Volume96
Issue number16
DOIs
Publication statusPublished - Oct 5 2017

Fingerprint

photoconductivity
halides
Photoconductivity
traps
Semiconductor materials
density functional theory
Defects
Density functional theory
defects
radiation
perovskites
dark current
electronics
Spectroscopy
absorption cross sections
spectroscopy
Radiation
Photoconducting materials
low concentrations
interstitials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, J. I., Peters, J. A., He, Y., Liu, Z., Das, S., Kontsevoi, O. Y., ... Wessels, B. W. (2017). Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2. Physical Review B, 96(16), [165201]. https://doi.org/10.1103/PhysRevB.96.165201

Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2. / Kim, Joon Il; Peters, John A.; He, Yihui; Liu, Zhifu; Das, Sanjib; Kontsevoi, Oleg Y.; Kanatzidis, Mercouri G; Wessels, Bruce W.

In: Physical Review B, Vol. 96, No. 16, 165201, 05.10.2017.

Research output: Contribution to journalArticle

Kim, JI, Peters, JA, He, Y, Liu, Z, Das, S, Kontsevoi, OY, Kanatzidis, MG & Wessels, BW 2017, 'Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2', Physical Review B, vol. 96, no. 16, 165201. https://doi.org/10.1103/PhysRevB.96.165201
Kim JI, Peters JA, He Y, Liu Z, Das S, Kontsevoi OY et al. Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2. Physical Review B. 2017 Oct 5;96(16). 165201. https://doi.org/10.1103/PhysRevB.96.165201
Kim, Joon Il ; Peters, John A. ; He, Yihui ; Liu, Zhifu ; Das, Sanjib ; Kontsevoi, Oleg Y. ; Kanatzidis, Mercouri G ; Wessels, Bruce W. / Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2. In: Physical Review B. 2017 ; Vol. 96, No. 16.
@article{9fb4edfd220248a4b65e7221a63569a0,
title = "Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2",
abstract = "Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg3Se2I2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as first-principles density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 1013-1015cm-3 and capture cross sections of ∼10-16cm2. A distinct persistent photoconductivity is observed at both low temperatures (<170K) and high temperatures (>230 K), with major implications for room-temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (VHg, VSe, and VI) and interstitials (Seint) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.",
author = "Kim, {Joon Il} and Peters, {John A.} and Yihui He and Zhifu Liu and Sanjib Das and Kontsevoi, {Oleg Y.} and Kanatzidis, {Mercouri G} and Wessels, {Bruce W.}",
year = "2017",
month = "10",
day = "5",
doi = "10.1103/PhysRevB.96.165201",
language = "English",
volume = "96",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

}

TY - JOUR

T1 - Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2

AU - Kim, Joon Il

AU - Peters, John A.

AU - He, Yihui

AU - Liu, Zhifu

AU - Das, Sanjib

AU - Kontsevoi, Oleg Y.

AU - Kanatzidis, Mercouri G

AU - Wessels, Bruce W.

PY - 2017/10/5

Y1 - 2017/10/5

N2 - Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg3Se2I2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as first-principles density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 1013-1015cm-3 and capture cross sections of ∼10-16cm2. A distinct persistent photoconductivity is observed at both low temperatures (<170K) and high temperatures (>230 K), with major implications for room-temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (VHg, VSe, and VI) and interstitials (Seint) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.

AB - Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg3Se2I2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as first-principles density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 1013-1015cm-3 and capture cross sections of ∼10-16cm2. A distinct persistent photoconductivity is observed at both low temperatures (<170K) and high temperatures (>230 K), with major implications for room-temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (VHg, VSe, and VI) and interstitials (Seint) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.

UR - http://www.scopus.com/inward/record.url?scp=85038115682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038115682&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.96.165201

DO - 10.1103/PhysRevB.96.165201

M3 - Article

AN - SCOPUS:85038115682

VL - 96

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - 165201

ER -