Electronic interlayer states in hexagonal boron nitride

A. Catellani, M. Posternak, A. Baldereschi, H. J F Jansen, Arthur J Freeman

Research output: Contribution to journalArticle

48 Citations (Scopus)


Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.

Original languageEnglish
Pages (from-to)6997-6999
Number of pages3
JournalPhysical Review B
Issue number10
Publication statusPublished - 1985


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Catellani, A., Posternak, M., Baldereschi, A., Jansen, H. J. F., & Freeman, A. J. (1985). Electronic interlayer states in hexagonal boron nitride. Physical Review B, 32(10), 6997-6999. https://doi.org/10.1103/PhysRevB.32.6997