Electronic interlayer states in hexagonal boron nitride

A. Catellani, M. Posternak, A. Baldereschi, H. J F Jansen, Arthur J Freeman

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.

Original languageEnglish
Pages (from-to)6997-6999
Number of pages3
JournalPhysical Review B
Volume32
Issue number10
DOIs
Publication statusPublished - 1985

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Boron nitride
Electronic states
boron nitrides
Band structure
energy bands
interlayers
plane waves
graphite
insulators
Graphite
electronics
boron nitride

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Catellani, A., Posternak, M., Baldereschi, A., Jansen, H. J. F., & Freeman, A. J. (1985). Electronic interlayer states in hexagonal boron nitride. Physical Review B, 32(10), 6997-6999. https://doi.org/10.1103/PhysRevB.32.6997

Electronic interlayer states in hexagonal boron nitride. / Catellani, A.; Posternak, M.; Baldereschi, A.; Jansen, H. J F; Freeman, Arthur J.

In: Physical Review B, Vol. 32, No. 10, 1985, p. 6997-6999.

Research output: Contribution to journalArticle

Catellani, A, Posternak, M, Baldereschi, A, Jansen, HJF & Freeman, AJ 1985, 'Electronic interlayer states in hexagonal boron nitride', Physical Review B, vol. 32, no. 10, pp. 6997-6999. https://doi.org/10.1103/PhysRevB.32.6997
Catellani, A. ; Posternak, M. ; Baldereschi, A. ; Jansen, H. J F ; Freeman, Arthur J. / Electronic interlayer states in hexagonal boron nitride. In: Physical Review B. 1985 ; Vol. 32, No. 10. pp. 6997-6999.
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