Electronic origin of ultrafast photoinduced strain in BiFeO3

Haidan Wen, Pice Chen, Margaret P. Cosgriff, Donald A. Walko, June Hyuk Lee, Carolina Adamo, Richard D Schaller, Jon F. Ihlefeld, Eric M. Dufresne, Darrell G. Schlom, Paul G. Evans, John W. Freeland, Yuelin Li

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Above-band-gap optical excitation produces interdependent structural and electronic responses in a multiferroic BiFeO3 thin film. Time-resolved synchrotron x-ray diffraction shows that photoexcitation can induce a large out-of-plane strain, with magnitudes on the order of half of one percent following pulsed-laser excitation. The strain relaxes with the same nanosecond time dependence as the interband relaxation of excited charge carriers. The magnitude of the strain and its temporal correlation with excited carriers indicate that an electronic mechanism, rather than thermal effects, is responsible for the lattice expansion. The observed strain is consistent with a piezoelectric distortion resulting from partial screening of the depolarization field by charge carriers, an effect linked to the electronic transport of excited carriers. The nonthermal generation of strain via optical pulses promises to extend the manipulation of ferroelectricity in oxide multiferroics to subnanosecond time scales.

Original languageEnglish
Article number037601
JournalPhysical Review Letters
Volume110
Issue number3
DOIs
Publication statusPublished - Jan 18 2013

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charge carriers
electronics
plane strain
ferroelectricity
photoexcitation
depolarization
excitation
time dependence
temperature effects
manipulators
pulsed lasers
synchrotrons
x ray diffraction
screening
expansion
oxides
thin films
pulses

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wen, H., Chen, P., Cosgriff, M. P., Walko, D. A., Lee, J. H., Adamo, C., ... Li, Y. (2013). Electronic origin of ultrafast photoinduced strain in BiFeO3. Physical Review Letters, 110(3), [037601]. https://doi.org/10.1103/PhysRevLett.110.037601

Electronic origin of ultrafast photoinduced strain in BiFeO3. / Wen, Haidan; Chen, Pice; Cosgriff, Margaret P.; Walko, Donald A.; Lee, June Hyuk; Adamo, Carolina; Schaller, Richard D; Ihlefeld, Jon F.; Dufresne, Eric M.; Schlom, Darrell G.; Evans, Paul G.; Freeland, John W.; Li, Yuelin.

In: Physical Review Letters, Vol. 110, No. 3, 037601, 18.01.2013.

Research output: Contribution to journalArticle

Wen, H, Chen, P, Cosgriff, MP, Walko, DA, Lee, JH, Adamo, C, Schaller, RD, Ihlefeld, JF, Dufresne, EM, Schlom, DG, Evans, PG, Freeland, JW & Li, Y 2013, 'Electronic origin of ultrafast photoinduced strain in BiFeO3', Physical Review Letters, vol. 110, no. 3, 037601. https://doi.org/10.1103/PhysRevLett.110.037601
Wen H, Chen P, Cosgriff MP, Walko DA, Lee JH, Adamo C et al. Electronic origin of ultrafast photoinduced strain in BiFeO3. Physical Review Letters. 2013 Jan 18;110(3). 037601. https://doi.org/10.1103/PhysRevLett.110.037601
Wen, Haidan ; Chen, Pice ; Cosgriff, Margaret P. ; Walko, Donald A. ; Lee, June Hyuk ; Adamo, Carolina ; Schaller, Richard D ; Ihlefeld, Jon F. ; Dufresne, Eric M. ; Schlom, Darrell G. ; Evans, Paul G. ; Freeland, John W. ; Li, Yuelin. / Electronic origin of ultrafast photoinduced strain in BiFeO3. In: Physical Review Letters. 2013 ; Vol. 110, No. 3.
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