Abstract
The electronic structure of the silicocarbide (Formula presented) has been determined by the full-potential linear-muffin-tin-orbital (FLMTO) method. The spectra of the core-electron levels and valence bands of (Formula presented) have been obtained by x-ray photoelectron spectroscopy (XPS) and compared with the results of FLMTO calculations and x-ray-emission spectroscopy (XES) data. Using XPS data of the inner electron levels (Ti (Formula presented) Si (Formula presented) and O (Formula presented)) and the results of band calculations, the nature of chemical bonding in the silicocarbide was analyzed. The high plasticity of (Formula presented) is explained by a weak interaction between the layers comprising (Formula presented) octahedra and plane nets composed of silicon atoms. The electronic and cohesive energy properties of the nonstoichiometric (Formula presented) and hypothetical (Formula presented)-based solid solutions (SS’s), namely (Formula presented) and (Formula presented) were simulated by the FLMTO method. An analysis of the cohesive properties shows probable destabilization of the hexagonal structure of (Formula presented) in the presence of C vacancies and oxygen impurities. By contrast, the partial substitution of N for C (Formula presented) SS’s) should lead to an increase in the cohesive properties of the crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 16042-16050 |
| Number of pages | 9 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - Jan 1 1998 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Electronic properties of Ti3SiC2-based solid solutions. / Medvedeva, N.; Novikov, D. L.; Ivanovsky, A. L.; Kuznetsov, M. V.; Freeman, Arthur J.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 24, 01.01.1998, p. 16042-16050.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electronic properties of Ti3SiC2-based solid solutions
AU - Medvedeva, N.
AU - Novikov, D. L.
AU - Ivanovsky, A. L.
AU - Kuznetsov, M. V.
AU - Freeman, Arthur J
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The electronic structure of the silicocarbide (Formula presented) has been determined by the full-potential linear-muffin-tin-orbital (FLMTO) method. The spectra of the core-electron levels and valence bands of (Formula presented) have been obtained by x-ray photoelectron spectroscopy (XPS) and compared with the results of FLMTO calculations and x-ray-emission spectroscopy (XES) data. Using XPS data of the inner electron levels (Ti (Formula presented) Si (Formula presented) and O (Formula presented)) and the results of band calculations, the nature of chemical bonding in the silicocarbide was analyzed. The high plasticity of (Formula presented) is explained by a weak interaction between the layers comprising (Formula presented) octahedra and plane nets composed of silicon atoms. The electronic and cohesive energy properties of the nonstoichiometric (Formula presented) and hypothetical (Formula presented)-based solid solutions (SS’s), namely (Formula presented) and (Formula presented) were simulated by the FLMTO method. An analysis of the cohesive properties shows probable destabilization of the hexagonal structure of (Formula presented) in the presence of C vacancies and oxygen impurities. By contrast, the partial substitution of N for C (Formula presented) SS’s) should lead to an increase in the cohesive properties of the crystal.
AB - The electronic structure of the silicocarbide (Formula presented) has been determined by the full-potential linear-muffin-tin-orbital (FLMTO) method. The spectra of the core-electron levels and valence bands of (Formula presented) have been obtained by x-ray photoelectron spectroscopy (XPS) and compared with the results of FLMTO calculations and x-ray-emission spectroscopy (XES) data. Using XPS data of the inner electron levels (Ti (Formula presented) Si (Formula presented) and O (Formula presented)) and the results of band calculations, the nature of chemical bonding in the silicocarbide was analyzed. The high plasticity of (Formula presented) is explained by a weak interaction between the layers comprising (Formula presented) octahedra and plane nets composed of silicon atoms. The electronic and cohesive energy properties of the nonstoichiometric (Formula presented) and hypothetical (Formula presented)-based solid solutions (SS’s), namely (Formula presented) and (Formula presented) were simulated by the FLMTO method. An analysis of the cohesive properties shows probable destabilization of the hexagonal structure of (Formula presented) in the presence of C vacancies and oxygen impurities. By contrast, the partial substitution of N for C (Formula presented) SS’s) should lead to an increase in the cohesive properties of the crystal.
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U2 - 10.1103/PhysRevB.58.16042
DO - 10.1103/PhysRevB.58.16042
M3 - Article
AN - SCOPUS:0001589794
VL - 58
SP - 16042
EP - 16050
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 24
ER -