Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva; A. J. Freeman; M. I. Bertoni; T. O. Mason

doi:10.1103/PhysRevLett.93.016408

Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva, A. J. Freeman, M. I. Bertoni, T. O. Mason

Northwestern University

Research output: Contribution to journal › Article

34 Citations (Scopus)

Abstract

The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al₂O₃, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H ^- occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H⁺ one of the hopping centers a conductivity channel and so enhance the transport.

Original language	English
Pages (from-to)	16408-16401
Number of pages	8
Journal	Physical review letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.93.016408
Publication status	Published - Jul 2 2004

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Medvedeva, J. E., Freeman, A. J., Bertoni, M. I., & Mason, T. O. (2004). Electronic structure and light-induced conductivity of a transparent refractory oxide. Physical review letters, 93(1), 16408-16401. https://doi.org/10.1103/PhysRevLett.93.016408

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10.1103/PhysRevLett.93.016408