Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva; A. J. Freeman; M. I. Bertoni; T. O. Mason

doi:10.1103/PhysRevLett.93.016408

Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva, A. J. Freeman, M. I. Bertoni, T. O. Mason

Northwestern University

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al₂O₃, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H ^- occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H⁺ one of the hopping centers a conductivity channel and so enhance the transport.

Original language	English
Article number	016408
Pages (from-to)	016408-1-016408-4
Journal	Physical review letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.93.016408
Publication status	Published - Jul 2 2004

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1103/PhysRevLett.93.016408

Fingerprint Dive into the research topics of 'Electronic structure and light-induced conductivity of a transparent refractory oxide'. Together they form a unique fingerprint.

Cite this

@article{fa5a656f63a54678872db2e8309f61a7,

title = "Electronic structure and light-induced conductivity of a transparent refractory oxide",

abstract = "The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.",

author = "Medvedeva, {J. E.} and Freeman, {A. J.} and Bertoni, {M. I.} and Mason, {T. O.}",

note = "Funding Information: We thank V. P. Dravid for sharing his unpublished electron microscopy results. Work supported by the DOE (Grant No. DE-FG02-88ER45372) and by the NSF through its MRSEC program at the Northwestern Materials Research Center. Computational resources have been provided by the DOE supported NERSC.",

year = "2004",

month = jul,

day = "2",

doi = "10.1103/PhysRevLett.93.016408",

language = "English",

volume = "93",

pages = "016408--1--016408--4",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "1",

}

TY - JOUR

T1 - Electronic structure and light-induced conductivity of a transparent refractory oxide

AU - Medvedeva, J. E.

AU - Freeman, A. J.

AU - Bertoni, M. I.

AU - Mason, T. O.

N1 - Funding Information: We thank V. P. Dravid for sharing his unpublished electron microscopy results. Work supported by the DOE (Grant No. DE-FG02-88ER45372) and by the NSF through its MRSEC program at the Northwestern Materials Research Center. Computational resources have been provided by the DOE supported NERSC.

PY - 2004/7/2

Y1 - 2004/7/2

N2 - The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.

AB - The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.

UR - http://www.scopus.com/inward/record.url?scp=3442891464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3442891464&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.93.016408

DO - 10.1103/PhysRevLett.93.016408

M3 - Article

AN - SCOPUS:3442891464

VL - 93

SP - 016408-1-016408-4

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 1

M1 - 016408

ER -