Abstract
The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.
| Original language | English |
|---|---|
| Pages (from-to) | 16408-16401 |
| Number of pages | 8 |
| Journal | Physical review letters |
| Volume | 93 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jul 2 2004 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Medvedeva, J. E., Freeman, A. J., Bertoni, M. I., & Mason, T. O. (2004). Electronic structure and light-induced conductivity of a transparent refractory oxide. Physical review letters, 93(1), 16408-16401. https://doi.org/10.1103/PhysRevLett.93.016408