Abstract
The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.
| Original language | English |
|---|---|
| Pages (from-to) | 16408-16401 |
| Number of pages | 8 |
| Journal | Physical Review Letters |
| Volume | 93 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jul 2 2004 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Electronic structure and light-induced conductivity of a transparent refractory oxide. / Medvedeva, J. E.; Freeman, Arthur J; Bertoni, M. I.; Mason, Thomas O.
In: Physical Review Letters, Vol. 93, No. 1, 02.07.2004, p. 16408-16401.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electronic structure and light-induced conductivity of a transparent refractory oxide
AU - Medvedeva, J. E.
AU - Freeman, Arthur J
AU - Bertoni, M. I.
AU - Mason, Thomas O
PY - 2004/7/2
Y1 - 2004/7/2
N2 - The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.
AB - The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.
UR - http://www.scopus.com/inward/record.url?scp=3442891464&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3442891464&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.93.016408
DO - 10.1103/PhysRevLett.93.016408
M3 - Article
AN - SCOPUS:3442891464
VL - 93
SP - 16408
EP - 16401
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 1
ER -