Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva, Arthur J Freeman, M. I. Bertoni, Thomas O Mason

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.

Original languageEnglish
Pages (from-to)16408-16401
Number of pages8
JournalPhysical Review Letters
Volume93
Issue number1
DOIs
Publication statusPublished - Jul 2 2004

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refractories
electronic structure
conductivity
oxides
photoexcitation
implantation
electrons
irradiation
annealing
protons
hydrogen
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic structure and light-induced conductivity of a transparent refractory oxide. / Medvedeva, J. E.; Freeman, Arthur J; Bertoni, M. I.; Mason, Thomas O.

In: Physical Review Letters, Vol. 93, No. 1, 02.07.2004, p. 16408-16401.

Research output: Contribution to journalArticle

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