Electronic structure and optical properties of layered dichalcogenides

TiS2 and TiSe2

H. W. Myron, Arthur J Freeman

Research output: Contribution to journalArticle

107 Citations (Scopus)

Abstract

The electronic-energy-band structure of the layered dichalcogenides TiS2 and TiSe2 has been determined using the Korringa-Kohn-Rostoker (KKR) method. Crystal potentials were constructed from overlapping atomic charge densities in the muffin-tin approximation for both full Slater exchange and Kohn-Sham-Gaspár exchange and several different starting atomic configurations. Detailed results are given here for the potential based on the atomic configuration 3d2 4s2 on the titanium atoms, 3p4 on the sulfur atoms, and 4p4 on the selenium atoms and with full Slater exchange. An energy gap of 2.0-2.7 eV between the occupied 3p sulfur bands and the empty 3d titanium bands is found for all potentials studied thereby confirming the traditional view of TiS2 as a semiconductor. TiSe2 is also found to be a semiconductor with a direct energy-band gap of 1.2 eV. The joint density of states calculated from the energy bands of these ab initio calculations are found to agree quite well with recently measured transmission spectra.

Original languageEnglish
Pages (from-to)481-486
Number of pages6
JournalPhysical Review B
Volume9
Issue number2
DOIs
Publication statusPublished - 1974

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Band structure
Electronic structure
energy bands
Optical properties
electronic structure
optical properties
sulfur
titanium
Titanium
Sulfur
Atoms
atoms
Energy gap
Semiconductor materials
configurations
selenium
Tin
tin
Selenium
Charge density

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure and optical properties of layered dichalcogenides : TiS2 and TiSe2. / Myron, H. W.; Freeman, Arthur J.

In: Physical Review B, Vol. 9, No. 2, 1974, p. 481-486.

Research output: Contribution to journalArticle

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